1N581XLB Datasheet, PDF (1/3 Pages) Cystech Electonics Corp. – 1.0Amp Silicon Schottky Barrier Rectifiers

CYStech Electronics Corp.
1.0Amp Silicon Schottky Barrier Rectifiers
1N581XLB Series
Spec. No. : C331LB
Issued Date : 2004.07.05
Revised Date :
Page No. : 1/3
Features
• Low forward voltage drop
• High current capability
• High surge current capability
• High reliability
• Epitaxial construction
Mechanical Data
• Case: DO-41 Molded Plastic.
• Terminals: Axial leads, solderable per MIL-STD-202, Method 208 guaranteed
• Polarity: Color band denotes cathode end.
• Epoxy: UL 94V-0 rate flame retardant
• Mounting position: Any
• Weight: 0.34 grams
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375”(9.5mm) lead length at Ta=90°C
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
Superimposed on Rated Load(JEDEC method)
Maximum Instantaneous Forward Voltage @ 1.0A
Maximum DC Reverse Current at Rated DC
Blocking Voltage
Typical Junction Capacitance (Note 1)
1N5817
20
14
20
0.45
1N5818
30
21
30
1
1N5819
40
28
40
25
0.55
0.6
1 (@Ta=25°C)
10 (@Ta=100°C)
110
Typical thermal resistance(Note 2)
80
Operating Temperature Range Tj
-65 to +125
Storage Temperature Range Tstg
-65 to +150
Notes : 1. Measured at 1 MHz and applied reverse voltage of 4.0Volts
2. Thermal resistance from junction to ambient, vertical PCB mounting, 0.5”(12.7mm) lead length.
Units
V
V
V
A
A
V
mA
pF
℃/W
°C
°C
1N581XLB
CYStek Product Specification