CY62138EV30_09 Datasheet, PDF (9/9 Pages) Cypress Semiconductor – 2-Mbit (256K x 8) MoBL Static RAM

CY62138EV30
MoBL^®
Document History Page
Document Title: CY62138EV30 2-Mbit (256K x 8) MoBL^® Static RAM
Document Number: 38-05577
REV.
ECN NO.
Issue
Date
Orig. of
Change
Description of Change
**
237432 See ECN AJU New data sheet
*A
427817 See ECN NXR Removed 35 ns Speed Bin
Removed “L” version
Removed 32-pin TSOPII package from product Offering.
Changed ball C3 from DNU to NC.
Removed the redundant footnote on DNU.
Moved Product Portfolio from Page # 3 to Page #2.
Changed I_CC (Max) value from 2 mA to 2.5 mA and I_CC (Typ) value from
1.5 mA to 2 mA at f = 1 MHz
Changed I_CC (Typ) value from 12 mA to 15 mA at f = f_max=1/t_RC
Changed I_SB1 and I_SB2 Typ. values from 0.7 µA to 1 µA and Max. values from
2.5 µA to 7 µA.
Changed V_CC stabilization time in footnote #7 from 100 µs to 200 µs
Changed the AC test load capacitance from 50pF to 30pF on Page# 4
Changed V_DR from 1.5V to 1V on Page# 4.
Changed I_CCDR from 1 µA to 3 µA in the Data Retention Characteristics table
on Page # 4.
Corected t_R in Data Retention Characteristics from 100 µs to t_RC ns
Changed t_OHA, t_LZCE, t_LZWE from 6 ns to 10 ns
Changed t_HZOE, t_HZCE, t_HZWE from 15 ns to 18 ns
Changed t_LZOE from 3 ns to 5 ns
Changed t_SCE and t_AW from 40 ns to 35 ns
Changed t_SD from 20 ns to 25 ns
Changed t_PWE from 25 ns to 35 ns
Updated the Ordering Information table and replaced Package Name
column with Package Diagram.
Document #: 38-05577 Rev. *A
Page 9 of 9
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