CY14B108L_1106 Datasheet, PDF (9/25 Pages) Cypress Semiconductor – 8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles

CY14B108L
CY14B108N
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Maximum accumulated storage time
At 150 C ambient temperature ...................... 1000 h
At 85 C ambient temperature ..................... 20 Years
Ambient temperature with
power applied .......................................... –55 C to +150 C
Supply voltage on V_CC relative to V_SS ...........–0.5 V to 4.1 V
Voltage applied to outputs
in High Z state .................................... –0.5 V to V_CC + 0.5 V
Input voltage ........................................–0.5 V to Vcc + 0.5 V
Transient voltage (< 20 ns) on
any pin to ground potential ................. –2.0 V to V_CC + 2.0 V
Package power dissipation
capability (T_A = 25 °C) ................................................. 1.0 W
Surface mount Pb soldering
temperature (3 Seconds) ......................................... +260 C
DC output current (1 output at a time, 1s duration) .... 15 mA
Static discharge voltage
(per MIL-STD-883, Method 3015) .......................... > 2001 V
Latch up current .................................................... > 200 mA
Operating Range
Range
Industrial
Ambient Temperature
–40 C to +85 C
V_CC
2.7 V to 3.6 V
DC Electrical Characteristics
Over the Operating Range (V_CC = 2.7 V to 3.6 V)
Parameter
Description
Test Conditions
V_CC
Power supply
I_CC1
Average V_CC current
t_RC = 20 ns
t_RC = 25 ns
t_RC = 45 ns
Values obtained without output loads
(I_OUT = 0 mA)
I_CC2
Average V_CC current during
All inputs don’t care, V_CC = Max
STORE
Average current for duration t_STORE
I_CC3
Average V_CC current at
All inputs cycling at CMOS levels.
t_RC= 200 ns, V_CC(Typ), 25 °C
Values obtained without output loads
(I_OUT = 0 mA).
I_CC4
Average V_CAP current during All inputs don’t care. Average current
AutoStore cycle
for duration t_STORE
I_SB
V_CC standby current
CE > (V_CC – 0.2 V).
V_IN < 0.2 V or > (V_CC – 0.2 V).
Standby current level after
nonvolatile cycle is complete.
Inputs are static. f = 0 MHz.
I_IX[9]
Input leakage current (except
HSB)
V_CC = Max, V_SS < V_IN < V_CC
I_OZ
V_IH
V_IL
V_OH
V_OL
V_CAP[10]
Input leakage current (for HSB)
Off-state output leakage current
Input HIGH voltage
Input LOW voltage
Output HIGH voltage
Output LOW voltage
Storage capacitor
V_CC = Max, V_SS < V_IN < V_CC
V_CC = Max, V_SS < V_OUT < V_CC,
CE or OE > V_IH or
BHE/BLE > V_IH or WE < V_IL
I_OUT = –2 mA
I_OUT = 4 mA
Between V_CAP pin and V_SS, 5 V rated
Min
2.7
–
–
–
–
–
–2
–200
–2
2.0
V_ss – 0.5
2.4
–
122
Typ ^[8]
3.0
–
–
40
–
–
Max Unit
3.6
V
75
mA
75
mA
57
mA
20
mA
–
mA
10
mA
10
mA
–
+2
A
–
+2
A
–
+2
A
–
V_CC + 0.5 V
–
0.8
V
–
–
V
–
0.4
V
150
360
F
Notes
8. Typical values are at 25 °C, V_CC = V_CC(Typ). Not 100% tested.
9.
The HSB pin
parameter is
chhaasrIa^Oc^Ute^Tr=ize–d2
µA
but
fnoor _{tVtOesHteodf .2.4}
V
when
both
active
HIGH
and
LOW
drivers
are
disabled.
When
they
are
enabled
standard
V_OH
and
V_OL
are
valid.
This
10.
MoitniisnVaV_{ClCwAPAaPyissvcarheluacerogmgeudmateroannadtemedeinstoimthuuasmtethvaeocrlteaapgisaecaditsuourrifnwfigcitihaeinnPtotchwheeasrr-gpUeepcaiRfvieaEdiClamAbLlienLtaconycdcolmemsapoxletlhtimeaitatsas.nuRicmecfmeesresadfupialptAelicupatootiwSonteornr-edootoewpAnerNcay4tic3ol5en9.c3ManfaoxcroVmmCopArlePetvdeaealtuaseilusgcoucnaersVasnCfutA}el_PeAosupttohtiSoanttosthr.ee.
capacitor
Therefore
Document #: 001-45523 Rev. *J
Page 9 of 25
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