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CY62128EV30_1106 Datasheet, PDF (7/18 Pages) Cypress Semiconductor – 1-Mbit (128 K x 8) Static RAM Automatic power-down when deselected
Switching Characteristics
Over the Operating Range
Parameter [14, 15]
Description
Read Cycle
tRC
tAA
tOHA
tACE
tDOE
tLZOE
tHZOE
tLZCE
tHZCE
tPU
tPD
Write Cycle [18]
tWC
tSCE
tAW
tHA
tSA
tPWE
tSD
tHD
tHZWE
tLZWE
Read cycle time
Address to data valid
Data hold from address change
CE LOW to data valid
OE LOW to data valid
OE LOW to low Z [16]
OE HIGH to high Z [16, 17]
CE LOW to low Z [16]
CE HIGH to high Z [16, 17]
CE LOW to power-up
CE HIGH to power-down
Write cycle time
CE LOW to write end
Address setup to write end
Address hold from write end
Address setup to write start
WE pulse width
Data setup to write end
Data hold from write end
WE LOW to high Z [16, 17]
WE HIGH to low Z [16]
CY62128EV30 MoBL®
45 ns (Industrial)
Unit
Min
Max
45
–
ns
–
45
ns
10
–
ns
–
45
ns
–
22
ns
5
–
ns
–
18
ns
10
–
ns
–
18
ns
0
–
ns
–
45
ns
45
–
ns
35
–
ns
35
–
ns
0
–
ns
0
–
ns
35
–
ns
25
–
ns
0
–
ns
–
18
ns
10
–
ns
Notes
14. CE is the logical combination of CE1 and CE2. When CE1 is LOW and CE2 is HIGH, CE is LOW; when CE1 is HIGH or CE2 is LOW, CE is HIGH.
15.
Test Conditions for
pulse levels of 0 to
all parameters other than tri-state parameters assume
VCC(typ), and output loading of the specified IOL/IOH as
signal transition time of 3 ns
shown in the AC Test Loads
or less (1 V/ns),
and Waveforms
timing reference
on page 5.
levels
of
VCC(typ)/2,
input
16. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
17. tHZOE, tHZCE, and tHZWE transitions are measured when the output enter a high impedance state.
18.
The internal write time of the
a write by going INACTIVE.
memory
The data
is defined by the
input setup and
overlap of WE, CE
hold timing should
b=eVrIeL.feArlel nscigendatlso
must be ACTIVE to initiate
the edge of the signal that
a write and
terminates
any
the
of these
write.
signals
can
terminate
Document #: 38-05579 Rev. *J
Page 7 of 18
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