CY14V256LA_13 Datasheet, PDF (7/22 Pages) Cypress Semiconductor – 256-Kbit (32 K x 8) nvSRAM

CY14V256LA
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Maximum accumulated storage time:
At 150 C ambient temperature ..................... 1000 h
At 85 C ambient temperature .................... 20 Years
Maximum junction temperature ................................. 150 C
Supply voltage on V_CC relative to V_SS ...........–0.5 V to 4.1 V
Supply voltage on V_CCQ relative to V_SS ......–0.5 V to 2.45 V
Voltage applied to outputs
in High Z State ..................................–0.5 V to V_CCQ + 0.5 V
Input voltage .....................................–0.5 V to V_CCQ + 0.5 V
Transient voltage (< 20 ns) on
any pin to ground potential ...............–2.0 V to V_CCQ + 2.0 V
Package power dissipation
capability (T_A = 25 °C) ................................................. 1.0 W
Surface mount Pb soldering
temperature (3 seconds) ......................................... +260 C
DC output current
(1 output at a time, 1s duration) .................................. 15 mA
Static discharge voltage
(per MIL-STD-883, Method 3015) ......................... > 2001 V
Latch up current .................................................... > 140 mA
Operating Range
Range
Ambient
Temperature
V_CC
V_CCQ
Industrial –40 C to +85 C 3.0 V to 3.6 V 1.65 V to 1.95 V
DC Electrical Characteristics
Over the Operating Range
Parameter
V_CC
V_CCQ
I_CC1
I_CCQ1
I_CC2
I_CC3
I_CCQ3
I_CC4
I_SB
I_IX[5]
Description
Power supply voltage
Test Conditions
Average V_CC current
Average V_CCQ current
Average V_CC current during
STORE
Average V_CC current at
t_RC = 200 ns, V_CC(Typ), 25 °C
Average V_CCQ current at
t_RC = 200 ns, V_CCQ(Typ), 25 °C
Average V_CAP current during
AutoStore cycle
V_CC standby current
Input leakage current
(except HSB)
Input leakage current (for HSB)
t_RC = 35 ns
Values obtained without output
loads
(I_OUT = 0 mA)
All inputs don’t care, V_CC = Max
Average current for duration t_STORE
All inputs cycling at CMOS levels.
Values obtained without output
loads (I_OUT = 0 mA)
All inputs don’t care. Average
current for duration t_STORE
CE > (V_CCQ – 0.2 V).
V_IN < 0.2 V or > (V_CCQ – 0.2 V).
Standby current level after
nonvolatile cycle is complete. Inputs
are static. f = 0 MHz
V_CCQ = Max, V_SS < V_IN < V_CCQ
V_CCQ = Max, V_SS < V_IN < V_CCQ
Min
3.0
1.65
–
–
–
–
–
–
–
–1
–100
Typ ^[4]
3.3
1.8
–
–
–
35
5
–
–
–
–
Max Unit
3.6
V
1.95
V
60
mA
20
mA
10
mA
–
mA
–
mA
8
mA
8
mA
+1
µA
+1
µA
Notes
4. Typical values are at 25 °C, V_CC = V_CC(Typ) and V_CCQ= V_CCQ(Typ). Not 100% tested.
5. The HSB pin has I_OUT = –4 µA for V_OH of 1.07 V when both active HIGH and LOW drivers are disabled. When they are enabled standard V_OH and V_OL are valid. This
parameter is characterized but not tested.
Document Number: 001-76295 Rev. *B
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