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W180 Datasheet, PDF (5/8 Pages) Cypress Semiconductor – Peak Reducing EMI Solution
W180
Absolute Maximum Ratings
Stresses greater than those listed in this table may cause per-
manent damage to the device. These represent a stress rating
only. Operation of the device at these or any other conditions
.
Parameter
Description
VDD, VIN
TSTG
TA
TB
PD
Voltage on any pin with respect to GND
Storage Temperature
Operating Temperature
Ambient Temperature under Bias
Power Dissipation
above those specified in the operating sections of this specifi-
cation is not implied. Maximum conditions for extended peri-
ods may affect reliability.
Rating
Unit
–0.5 to +7.0
V
–65 to +150
°C
0 to +70
°C
–55 to +125
°C
0.5
W
DC Electrical Characteristics: 0°C < TA < 70°C, VDD = 3.3V ±5%
Parameter
Description
Test Condition
IDD
Supply Current
tON
Power Up Time
First locked clock cycle after Power
Good
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
IIL
Input Low Current
Note 1
IIH
Input High Current
Note 1
IOL
Output Low Current
@ 0.4V, VDD = 3.3V
IOH
Output High Current
@ 2.4V, VDD = 3.3V
CI
Input Capacitance
RP
Input Pull-Up Resistor
ZOUT
Clock Output Impedance
Note:
1. Inputs FS2:1& SS% have a pull-up resistor; Input SSON# has a pull-down resistor.
Min.
2.4
2.4
–50
Typ.
18
15
15
500
25
Max.
Unit
32
mA
5
ms
0.8
V
V
0.4
V
V
µA
50
µA
mA
mA
7
pF
kΩ
Ω
5