CY7C199 Datasheet, PDF (5/13 Pages) Cypress Semiconductor – 32K x 8 Static RAM

CY7C199
Switching Characteristics Over the Operating Range (-20, -25, -35, -45)^{[3, 7]}
Parameter
Description
t_PD
CE HIGH to Power-down
Write Cycle^[10,11]
t_WC
t_SCE
t_AW
t_HA
t_SA
t_PWE
t_SD
t_HD
t_HZWE
t_LZWE
Write Cycle Time
CE LOW to Write End
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
Data Set-up to Write End
Data Hold from Write End
WE LOW to High-Z^[9]
WE HIGH to Low-Z^[8]
7C199-20
7C199-25
7C199-35
7C199-45
Min. Max. Min. Max. Min. Max. Min. Max. Unit
20
20
20
25
ns
20
25
35
45
ns
15
18
22
22
ns
15
20
30
40
ns
0
0
0
0
ns
0
0
0
0
ns
15
18
22
22
ns
10
10
15
15
ns
0
0
0
0
ns
10
11
15
15
ns
3
3
3
3
ns
Switching Waveforms
Read Cycle No. 1^{[12, 13]}
t_RC
ADDRESS
DATA OUT
t_AA
t_OHA
PREVIOUS DATA VALID
Read Cycle No. 2 ^{[13, 14]}
t_RC
CE
DATA VALID
t_ACE
OE
DATA OUT
t_DOE
t_LZOE
HIGH IMPEDANCE
t_LZCE
V_CC
SUPPLY
CURRENT
t_PU
50%
Notes:
12. Device is continuously selected. OE, CE = V_IL.
13. WE is HIGH for read cycle.
14. Address valid prior to or coincident with CE transition LOW.
DATA VALID
t_HZOE
t_HZCE
HIGH
IMPEDANCE
t_PD
ICC
50%
ISB
Document #: 38-05160 Rev. *A
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