CY7C194BN Datasheet, PDF (4/10 Pages) Cypress Semiconductor – 256 Kb (64K x 4) Static RAM

CY7C194BN
Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.)
Parameter
T_STG
T_AMB
V_CC
V_IN, V_OUT
I_OUT
V_ESD
I_LU
Description
Storage Temperature
Ambient Temperature with Power Applied (i.e. case temperature)
Core Supply Voltage Relative to V_SS
DC Voltage Applied to any Pin Relative to V_SS
Output Short-Circuit Current
Static Discharge Voltage (per MIL-STD-883, Method 3015)
Latch-up Current
Value
Unit
–65 to +150
°C
–55 to +125
°C
–0.5 to +7.0
V
–0.5 to V_CC + 0.5
V
20
mA
> 2001
V
> 200
mA
Operating Range
Range
Commercial
Ambient Temperature (T_A)
0°C to 70°C
Voltage Range (V_CC)
5.0V ± 10%
DC Electrical Characteristics^[3]
Parameter
V_IH
V_IL
V_OH
V_OL
I_CC
I_SB1
I_SB2
I_OZ
I_IX
Description
Condition
Input HIGH Voltage
Input LOW Voltage
Output HIGH Voltage V_CC = Min., loh = –4.0 ma
Output LOW Voltage V_CC = Min., lol = 8.0 ma
V_CC Operating Supply V_CC = Max., I_OUT = 0 mA,
Current
f = F_MAX = 1 / t_RC
Automatic CE
V_CC = Max., CE ≥ V_IH, V_IN ≥
Power-down Current V_IH or V_IN ≤ V_IL, f = F_MAX
TTL Inputs
Automatic CE
V_CC = Max., CE ≥ V_CC - 0.3v,
Power-down Current V_IN > V_CC - 0.3v or V_IN ≤ 0.3,
CMOS Inputs
f = 0, Commercial
Output Leakage
Current
GND ≤ Vi ≤ V_CC,
Output Disabled
Input Load Current GND ≤ Vi ≤ V_CC
15 ns
Min.
Max.
2.2
–0.3
V_CC + 0.3
0.8
2.4
–
–
0.4
–
80
–
30
–
10
–5
+5
–5
+5
25 ns
Min.
Max.
Unit
2.2 V_CC + 0.3 V
–0.5
0.8
V
2.4
–
V
–
0.4
V
–
80
mA
–
30
mA
–
10
mA
–5
+5
µA
–5
+5
µA
Capacitance^[2]
Parameter
Description
Conditions
Max
Unit
C_IN
Input Capacitance T_A = 25°C, f = 1 MHz, V_CC = 5.0V
7
pF
C_OUT
Output Capacitance
10
Thermal Resistance^[4]
CY7C194BN
Parameter
Description
Conditions
24 DIP
24 SOJ
Θ_JA
Thermal Resistance
Still Air, soldered on a 3 x 4.5
75.69
84.15
(Junction to Ambient)
square inches, two-layer
Θ_JC
Thermal Resistance
printed circuit board
(Junction to Case)
33.80
37.56
Note:
2. Tested initially and after any design or process change that may affect these parameters
3. V_IL(min) = –2.0V for pulse durations of less than 20 ns.
4. Test Conditions assume a transition time of 3ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
Unit
°C/W
Document #: 001-06446 Rev. **
Page 4 of 10
[+] Feedback