CY62126EV30_11 Datasheet, PDF (4/18 Pages) Cypress Semiconductor – 1-Mbit (64 K x 16) Static RAM Automatic power down when deselected

CY62126EV30 MoBL^®
Maximum Ratings
Exceeding maximum ratings may shorten the battery life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied .......................................... –55 °C to +125 °C
Supply voltage to ground
potential .............................–0.3 V to 3.6 V (V_CCmax + 0.3 V)
DC voltage applied to outputs
in High Z state^{[3, 4]} ..............–0.3 V to 3.6 V (V_CCmax + 0.3 V)
Electrical Characteristics
DC input voltage^{[3, 4]} 0.3 V to 3.6 V (V_CCmax + 0.3 V)
Output current into outputs (LOW) ..............................20 mA
Static discharge voltage ......................................... > 2001 V
(MIL-STD-883, Method 3015)
Latch up current .................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature
V_CC^[5]
CY62126EV30LL Industrial –40 °C to +85 °C 2.2 V to 3.6 V
Automotive –40 °C to +125 °C
Over the Operating Range
Parameter
Description
Test Conditions
45 ns (Industrial)
Min Typ^[6] Max
55 ns (Automotive)
Min Typ^[6] Max
Unit
V_OH
Output high voltage
I_OH = –0.1 mA
2.0 –
–
2.0 –
–
V
I_OH = –1.0 mA, V_CC > 2.70 V
2.4 –
–
2.4 –
–
V
V_OL
Output low voltage
I_OL = 0.1 mA
––
0.4
–
0.4
V
I_OL = 2.1 mA, V_CC > 2.70 V
––
0.4
––
0.4
V
V_IH
Input high voltage
V_CC = 2.2 V to 2.7 V
1.8 – V_CC + 0.3 1.8 – V_CC + 0.3 V
V_CC = 2.7 V to 3.6 V
2.2 – V_CC + 0.3 2.2 – V_CC + 0.3 V
V_IL
Input low voltage
V_CC = 2.2 V to 2.7 V
–0.3 –
0.6 –0.3 –
0.6
V
V_CC = 2.7 V to 3.6 V
–0.3 –
0.8 –0.3 –
0.8
V
I_IX
Input leakage current GND < V_I < V_CC
–1 –
+1
–4 –
+4
A
I_OZ
Output leakage current GND < V_O < V_CC, Output
–1 –
+1
–4 –
+4
A
Disabled
I_CC
I_SB1[7]
I_SB2 ^[7]
V_CC operating supply f = f_max = 1/t_RC V_CC = V_CCmax
–
11
16
current
f = 1 MHz
I_OUT = 0 mA
CMOS levels
– 1.3
2.0
Automatic CE power CE > V_CC 0.2 V,
–1
4
down current —CMOS
inputs
V_IN > V_CC – 0.2 V, V_IN < 0.2 V,
f = f_max (Address and Data Only),
f = 0 (OE, BHE, BLE and WE),
V_CC = 3.60 V
Automatic CE power CE > V_CC – 0.2 V,
–1
4
down current —CMOS
inputs
V_IN > V_CC – 0.2 V or V_IN < 0.2 V,
f = 0, V_CC = 3.60 V
– 11
35
mA
– 1.3
4.0
–1
35
A
–1
30
A
Notes
3. V_IL(min) = –2.0 V for pulse durations less than 20 ns.
4. V_IH(max) = V_CC + 0.75 V for pulse durations less than 20 ns.
5. Full device AC operation assumes a 100 s ramp time from 0 to V_cc(min) and 200 s wait time after V_cc stabilization.
6. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V_CC = V_CC(typ), T_A = 25 °C.
7. Chip enable (CE) needs to be tied to CMOS levels to meet the I_SB1 / I_SB2 / I_CCDR spec. Other inputs can be left floating.
Document Number: 38-05486 Rev. *I
Page 4 of 18
[+] Feedback