CY14C256PA_12 Datasheet, PDF (31/43 Pages) Cypress Semiconductor – 256-Kbit (32 K × 8) SPI nvSRAM with Real Time Clock

CY14C256PA
CY14B256PA
CY14E256PA
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Maximum accumulated storage time
At 150 C ambient temperature ...................... 1000 h
At 85 C ambient temperature .................... 20 Years
Ambient temperature with
power applied .......................................... –55 C to +150 C
Supply voltage on V_CC relative to V_SS
CY14C256PA: ...................................–0.5 V to +3.1 V
CY14B256PA: ...................................–0.5 V to +4.1 V
CY14E256PA: ...................................–0.5 V to +7.0 V
DC voltage applied to outputs
in High Z state .................................... –0.5 V to V_CC + 0.5 V
Input voltage ....................................... –0.5 V to V_CC + 0.5 V
Transient voltage (<20 ns) on
any pin to ground potential ................. –2.0 V to V_CC + 2.0 V
Package power dissipation
capability (T_A = 25 °C) ................................................. 1.0 W
Surface mount lead soldering
temperature (3 seconds) ......................................... +260 C
DC output current (1 output at a time, 1s duration) .... 15 mA
Static discharge voltage
(per MIL-STD-883, Method 3015) .......................... > 2001 V
Latch-up current .................................................... > 140 mA
Operating Range
Device
CY14C256PA
CY14B256PA
CY14E256PA
Range
Industrial
Ambient
Temperature
–40 °C to +85 °C
V_CC
2.4 V to 2.6 V
2.7 V to 3.6 V
4.5 V to 5.5 V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
V_CC
Power supply
I_CC1
Average V_CC current
I_CC2
Average V_CC current during
STORE
I_CC3
Average V_CC current
f_SCK = 1 MHz;
V_CC = V_CC(Typ), 25 °C
I_CC4
Average V_CAP current during
AutoStore cycle
I_SB
V_CC standby current
I_ZZ
Sleep mode current
I_IX[9]
Input leakage current (except
HSB)
Input leakage current (for HSB)
I_OZ
Off state output leakage current
Test Conditions
CY14C256PA
CY14B256PA
CY14E256PA
f_SCK = 40 MHz;
CY14C256PA
Values obtained
without output loads
CY14B256PA
(I_OUT = 0 mA)
CY14E256PA
f_SCK = 104 MHz;
Values obtained without output
loads (I_OUT = 0 mA)
All inputs don’t care, V_CC = max
Average current for duration t_STORE
All inputs cycling at CMOS levels.
Values obtained without output
loads (I_OUT = 0 mA)
All inputs don't care. Average
current for duration t_STORE
CS > (V_CC – 0.2 V).
V_IN < 0.2 V or > (V_CC – 0.2 V).
‘W’ bit set to ‘0’. Standby current
level after nonvolatile cycle is
complete. Inputs are static.
f_SCK = 0 MHz.
t_SLEEP time after SLEEP instruction
is registered. All inputs are static
and configured at CMOS logic level.
Min
2.4
2.7
4.5
–
–
–
–
–
–
–
–
–1
–100
–1
Typ ^[8]
2.5
3.0
5.0
–
–
–
–
–
–
–
–
–
–
–
Max Unit
2.6
V
3.6
V
5.5
V
3
mA
4
mA
10
mA
3
mA
1
mA
3
mA
250
A
8
A
+1
A
+1
A
+1
A
Notes
8. Typical values are at 25 °C, V_CC = V_CC (Typ). Not 100% tested.
9. The HSB pin has I_OUT = -2 µA for V_OH of 2.4 V when both active HIGH and LOW drivers are disabled. When they are enabled standard V_OH and V_OL are valid. This
parameter is characterized but not tested.
Document Number: 001-65281 Rev. *E
Page 31 of 43