CYK001M16ZCCA Datasheet, PDF (3/11 Pages) Cypress Semiconductor – 16-Mbit (1M x 16) Pseudo Static RAM

CYK001M16ZCCA
MoBL3™
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied............................................ –55°C to + 125°C
Supply Voltage to Ground Potential ................. –0.4V to 4.6V
DC Voltage Applied to Outputs
in High Z State^{[6, 7, 8]} ........................................–0.4V to 3.7V
DC Input Voltage^{[6, 7, 8]}.....................................–0.4V to 3.7V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... > 200 mA
Operating Range
Device
CYK001M16ZCCA
Range
Industrial
Ambient Temperature
–25°C to +85°C
V_CC
2.70V to 3.30V
DC Electrical Characteristics (Over the Operating Range)
Parameter Description
Test Conditions
CYK001M16ZCCAU- CYK001M16ZCCAU-
55
70
Min. Typ.^[5] Max. Min. Typ.^[5] Max. Unit
V_CC
Supply Voltage
V_OH
Output HIGH I_OH = –-0.1 mA
Voltage
2.7 3.0
V_CC
– 0.4
3.3 2.7
V_CC
– 0.4
3.3 V
V
V_OL
Output LOW I_OL = 0.1mA
Voltage
0.4
0.4 V
V_IH
Input HIGH
V_CC= 2.7V to 3.3V
Voltage
V_IL
Input LOW
Voltage
0.8 *
V_CC
–0.4
V_CC +
0.4V
0.4
0.8 *
V_CC
-0.4
V_CC + V
0.4V
0.4 V
I_IX
Input Leakage GND < V_IN < V_CC
Current
–1
+1 –1
+1 µA
I_OZ
OutputLeakage GND < V_OUT < V_CC, Output Disabled –1
Current
+1 –1
+1 µA
I_CC
V_CC Operating f = f_MAX = 1/t_RC
V_CC =
Supply
Current
f = 1 MHz
V_CCmax
I_OUT = 0 mA
CMOS
levels
13
22
3
5
13
17 mA
3
5 mA
I_SB1
Automatic CE CE > V_CC−0.2V
V_CC = 3.3V
Power-Down V_IN > V_CC–0.2V,
Current —
V_IN < 0.2V)
CMOS Inputs f = f_MAX (Address and
Data Only),
f = 0 (OE, WE, BHE
and BLE), V_CC = 3.30V
I_SB2
Automatic CE CE > V_CC – 0.2V
V_CC = 3.3V
Power-Down V_IN > V_CC – 0.2V or V_IN
Current —
< 0.2V,
CMOS Inputs f = 0, V_CC = 3.30V
I_ZZ
Deep Sleep
V_CC = V_CCMAX; ZZ =
Current
LOW
100 525
100 525 µA
80 150
50
80 150 µA
50 µA
Notes:
6. V_IL(MIN) = –0.5V for pulse durations less than 20 ns.
7. V_IH(Max) = Vcc + 0.5V for pulse durations less than 20 ns.
8. Overshoot and undershoot specifications are characterized and are not 100% tested.
Document #: 38-05454 Rev. *B
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