CY7C1011CV33_06 Datasheet, PDF (3/11 Pages) Cypress Semiconductor – 2-Mbit (128K x 16) Static RAM

CY7C1011CV33
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V_CC to Relative GND^[1] .... –0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State^[1] ....................................–0.5V to V_CC + 0.5V
DC Input Voltage^[1].................................–0.5V to V_CC + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current...................................................... >200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature
0°C to +70°C
–40°C to +85°C
V_CC
3.3V ± 0.3V
DC Electrical Characteristics Over the Operating Range
–10
Parameter
Description
Test Conditions
Min. Max.
V_OH
Output HIGH Voltage V_CC = Min., I_OH = –4.0 mA
V_OL
Output LOW Voltage V_CC = Min., I_OL = 8.0 mA
V_IH
Input HIGH Voltage
V_IL
Input LOW Voltage^[1]
I_IX
Input Leakage Current GND < V_I < V_CC
I_OZ
Output Leakage Current GND < V_OUT < V_CC,
Output Disabled
2.4
0.4
2.0 V_CC
+ 0.3
–0.3 0.8
–1 +1
–1 +1
I_CC
V_CC Operating
V_CC = Max.,
Com’l
90
Supply Current
f = f_MAX = 1/t_RC
Ind’l
100
I_SB1
Automatic CE
Max. V_CC, CE > V_IH
40
Power-down Current V_IN > V_IH or
—TTL Inputs
V_IN < V_IL, f = f_MAX
I_SB2
Automatic CE
Max. V_CC,
Com’l/
10
Power-down Current CE > V_CC – 0.3V,
Ind’l
—CMOS Inputs
V_IN > V_CC – 0.3V,
or V_IN < 0.3V, f = 0
Capacitance^[2]
–12
Min. Max.
2.4
0.4
2.0 V_CC
+ 0.3
–0.3 0.8
–1 +1
–1 +1
85
95
40
10
–15
Min. Max. Unit
2.4
V
0.4 V
2.0 V_CC V
+ 0.3
–0.3 0.8 V
–1 +1 µA
–1 +1 µA
80 mA
90 mA
40 mA
10 mA
Parameter
C_IN
C_OUT
Description
Input Capacitance
I/O Capacitance
Test Conditions
T_A = 25°C, f = 1 MHz, V_CC = 3.3V
Max.
8
8
Unit
pF
pF
Thermal Resistance^[2]
Parameter
Description
Θ_JA
Thermal Resistance
(Junction to Ambient)
Θ_JC
Thermal Resistance
(Junction to Case)
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
TSOP II TQFP VFBGA Unit
44.56 42.66 46.98 °C/W
10.75 14.64 9.63 °C/W
Notes:
1. V_IL (min.) = –2.0V for pulse durations of less than 20 ns.
2. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05232 Rev. *E
Page 3 of 11
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