CY62146DV30_09 Datasheet, PDF (3/11 Pages) Cypress Semiconductor – 4-Mbit (256K x 16) Static RAM

CY62146DV30
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground
Potential ......................................–0.3V to + V_CC(MAX) + 0.3V
DC Voltage Applied to Outputs
in High-Z State^{[6, 7]}.........................–0.3V to V_CC(MAX) + 0.3V
DC Input Voltage^{[6, 7]} ..................... –0.3V to V_CC(MAX) + 0.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current...................................................... >200 mA
Operating Range
Device
Ambient Tem-
Range perature (T_A)
V_CC^[8]
CY62146DV30L Industrial –40°C to +85°C 2.20V to 3.60V
CY62146DV30LL
Electrical Characteristics Over the Operating Range
Parameter Description
Test Conditions
CY62146DV30-45 CY62146DV30-55
Min. Typ.^[5] Max. Min. Typ.^[5] Max.
V_OH
Output HIGH I_OH = –0.1 mA V_CC = 2.20V 2.0
Voltage
I_OH = –1.0 mA V_CC = 2.70V 2.4
V_OL
Output LOW I_OL = 0.1 mA V_CC = 2.20V
Voltage
I_OL = 2.1 mA V_CC = 2.70V
V_IH
Input HIGH V_CC = 2.2V to 2.7V
1.8
Voltage
2.0
2.4
0.4
0.4
V_CC + 1.8
0.3V
0.4
0.4
V_CC +
0.3V
V_CC= 2.7V to 3.6V
2.2
V_CC + 2.2
V_CC +
0.3V
0.3V
V_IL
Input LOW V_CC = 2.2V to 2.7V
–0.3
0.6 –0.3
0.6
Voltage
V_CC= 2.7V to 3.6V
–0.3
0.8 –0.3
0.8
I_IX
Input Leakage GND < V_I < V_CC
Current
–1
+1 –1
+1
I_OZ
Output
GND < V_O < V_CC, Output
–1
+1 –1
+1
Leakage
Disabled
Current
I_CC
V_CC
f = f_MAX = V_CC = V_CCmax
Operating 1/t_RC
I_OUT = 0 mA
Supply
f = 1 MHz ^{CMOS levels}
Current
10 20
1.5
3
8
15
1.5
3
I_SB1
Automatic CE > V_CC−0.2V,
L
CE
Power-down
V_IN>V_CC–0.2V, V_IN<0.2V)
f = f_MAX (Address and Data
LL
Current — Only),
CMOS
f = 0 (OE, WE, BHE and
Inputs
BLE), V_CC = 3.60V
I_SB2
Automatic CE > V_CC – 0.2V,
L
CE
V_IN > V_CC – 0.2V or V_IN < _LL
Power-down 0.2V,
Current — f = 0, V_CC = 3.60V
CMOS Inputs
2
12
8
2
12
8
2
12
8
2
12
8
Notes:
6. V_IL(min.) = –2.0V for pulse durations less than 20 ns.
7. V_IH(max) = V_CC+0.75V for pulse durations less than 20 ns.
8. Full device AC operation assumes a 100-µs ramp time from 0 to V_CC(min) and 200 µs wait time after V_CC stabilization.
CY62146DV30-70
Min. Typ.^[5] Max. Unit
2.0
V
2.4
V
0.4 V
0.4 V
1.8
V_CC + V
0.3V
2.2
V_CC + V
0.3V
–0.3
0.6 V
–0.3
0.8 V
–1
+1 µA
–1
+1 µA
8 15 mA
1.5 3 mA
2 12 µA
8
2 12 µA
8
Document #: 38-05339 Rev. *A
Page 3 of 11