CY14B256P_13 Datasheet, PDF (25/37 Pages) Cypress Semiconductor – 256-Kbit (32 K x 8) Serial (SPI) nvSRAM with Real Time Clock

CY14B256P
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Maximum accumulated storage time
At 150 C ambient temperature ...................... 1000 h
At 85 C ambient temperature .................... 20 Years
Maximum junction temperature .................................. 150 C
Supply voltage on V_CC relative to V_SS .........–0.5 V to +4.1 V
DC voltage applied to outputs
in high Z state ..................................... –0.5 V to V_CC + 0.5 V
Input voltage ....................................... –0.5 V to V_CC + 0.5 V
Transient voltage (< 20 ns) on
any pin to ground potential ................. –2.0 V to V_CC + 2.0 V
Package power dissipation
capability (T_A = 25 °C) ................................................. 1.0 W
Surface mount lead soldering
temperature (3 Seconds) ......................................... +260 C
DC output current
(1 output at a time, 1 s duration).................................. 15 mA
Static discharge voltage
(per MIL-STD-883, method 3015) ......................... > 2001 V
Latch up current .................................................... > 200 mA
Operating Range
Range
Industrial
Ambient Temperature
–40 C to +85 C
V_CC
2.7 V to 3.6 V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
V_CC
Power supply voltage
I_CC1
Average V_cc current
At f_SCK = 40 MHz.
Values obtained without output loads
(I_OUT = 0 mA)
I_CC2
Average V_CC current during
All inputs don’t care, V_CC = Max
STORE
Average current for duration t_STORE
I_CC4
Average V_CAP current during All inputs don’t care.
AutoStore cycle
Average current for duration t_STORE
I_SB
V_CC standby current
CS > (V_CC – 0.2 V).
V_IN < 0.2 V or > (V_CC – 0.2 V).
W bit set to ‘0’. Standby current level
after nonvolatile cycle is complete.
Inputs are static.
f = 0 MHz.
I_IX[9]
Input leakage current (except
HSB)
V_CC = Max, V_SS < V_IN < V_CC
Input leakage current (for HSB) V_CC = Max, V_SS < V_IN < V_CC
I_OZ
Off state output leakage current V_CC = Max, V_SS < V_OUT < V_CC
V_IH
Input HIGH voltage
V_IL
Input LOW voltage
V_OH
Output HIGH voltage
I_OUT = –2 mA
V_OL
Output LOW voltage
I_OUT = 4 mA
V_CAP[10]
Storage capacitor
Between V_CAP pin and V_SS
V_VCAP[11, ^12] Maximum voltage driven on V_CAP V_CC = Max
pin by the device
Min
2.7
–
–
–
–
–1
–100
–1
2.0
V_SS – 0.5
2.4
–
61
–
Typ ^[8]
3.0
–
–
–
–
–
–
–
–
–
–
–
68
–
Max Unit
3.6
V
10
mA
10
mA
5
mA
5
mA
+1
µA
+1
µA
+1
µA
V_CC + 0.5 V
0.8
V
V
0.4
V
180
µF
V_CC
V
Notes
8. Typical values are at 25 °C, V_CC = V_CC(Typ). Not 100% tested.
9.
The HSB pin
parameter is
chhaasraI^Oc^Ute^Tr=ize–d2
µA
but
fnoortVte_OsHteodf.2.4
V
when
both
active
HIGH
and
LOW
drivers
are
disabled.
When
they
are
enabled
standard
V_OH
and
V_OL
are
valid.
This
10. MVis_Cian_{AlPwVaCisyAscPhrvaearclguoeemdgmtuoeanardamendtinetiemosuutmhseavtaothlcteaargpeeaicsdituaorrsinuwgfiftiahciiPennotthwceehrsa-pUregpceiRfaieEvdaCimAlaLbinLleactnyodcclemomsaoxpltleihmtaeittsaa.nsRuimecfcmeeresasdpfiuapltleiAcaputotioowSnetorn-rodetoeowpAneNrc4ay3tcio5len9.3cMafnoarxcmoVmoCrpAelPedtveeataaluilessugocuncaeVrsaCsnAfutP}eleoAsputttihooaSntstot.hree.cTahpearceitfoorreonit
11.
MtemaxpimeruamturveolrtaanggeeosnhVou_{ClAdPbpeinhi(gVhVeCrAtPh)ains}
provided for guidance
the V_VCAP voltage.
when
choosing
the
V_CAP
capacitor.
The
voltage
rating
of
the
V_CAP
capacitor
across
the
operating
12. These parameters are guaranteed by design and are not tested.
Document Number: 001-53881 Rev. *J
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