CY7C1566KV18 Datasheet, PDF (21/28 Pages) Cypress Semiconductor – 72-Mbit DDR-II+ SRAM 2-Word Burst Architecture

PRELIMINARY
CY7C1566KV18, CY7C1577KV18
CY7C1568KV18, CY7C1570KV18
Electrical Characteristics (continued)
DC Electrical Characteristics
Over the Operating Range ^[13]
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
I_SB1
Automatic Power down
Max V_DD,
550 MHz (x8)
Current
Both Ports Deselected,
V_IN ≥ V_IH or V_IN ≤ V_IL
f = f_MAX = 1/t_CYC,
(x9)
(x18)
Inputs Static
(x36)
380
mA
380
380
380
500 MHz (x8)
360
mA
(x9)
360
(x18)
360
(x36)
360
450 MHz (x8)
340
mA
(x9)
340
(x18)
340
(x36)
340
400 MHz (x8)
320
mA
(x9)
320
(x18)
320
(x36)
320
AC Electrical Characteristics
Over the Operating Range ^[12]
Parameter
Description
V_IH
Input HIGH Voltage
V_IL
Input LOW Voltage
Test Conditions
Min
V_REF + 0.2
–0.24
Typ
Max
Unit
– V_DDQ + 0.24 V
–
V_REF – 0.2
V
Capacitance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
C_IN
Input Capacitance
C_O
Output Capacitance
Test Conditions
T_A = 25°C, f = 1 MHz, V_DD = 1.8V, V_DDQ = 1.5V
Max
Unit
2
pF
3
pF
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
Θ_JA Thermal Resistance
(Junction to Ambient)
Θ_JC Thermal Resistance
(Junction to Case)
Test Conditions
Test conditions follow standard test methods and procedures
for measuring thermal impedance, in accordance with
EIA/JESD51.
165 FBGA
Package
13.7
3.73
Unit
°C/W
°C/W
Document Number: 001-15880 Rev. *D
Page 21 of 28
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