CY7C1522JV18 Datasheet, PDF (21/27 Pages) Cypress Semiconductor – 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture

CY7C1522JV18, CY7C1529JV18
CY7C1523JV18, CY7C1524JV18
Electrical Characteristics (continued)
DC Electrical Characteristics
Over the Operating Range ^[12]
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
I_SB1
Automatic Power Down
Max V_DD,
300 MHz (x8)
Current
Both Ports Deselected,
V_IN ≥ V_IH or V_IN ≤ V_IL
(x9)
f = f_MAX = 1/t_CYC,
(x18)
Inputs Static
(x36)
400
mA
400
400
400
250 MHz (x8)
380
mA
(x9)
380
(x18)
380
(x36)
380
AC Electrical Characteristics
Over the Operating Range ^[11]
Parameter
Description
V_IH
Input HIGH Voltage
V_IL
Input LOW Voltage
Test Conditions
Min
Typ
V_REF + 0.2
–
–
–
Capacitance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
Test Conditions
Max
C_IN
Input Capacitance
T_A = 25°C, f = 1 MHz, V_DD = 1.8V, V_DDQ =
5.5
C_CLK
Clock Input Capacitance ^1.5V
8.5
C_O
Output Capacitance
6
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
Θ_JA
Thermal Resistance
(Junction to Ambient)
Θ_JC Thermal Resistance
(Junction to Case)
Test Conditions
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, in accordance with
EIA/JESD51.
165 FBGA
Package
16.3
2.1
Max
–
V_REF – 0.2
Unit
V
V
Unit
pF
pF
pF
Unit
°C/W
°C/W
Document #: 001-44700 Rev. *B
Page 21 of 27
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