CY8C21334_13 Datasheet, PDF (17/38 Pages) Cypress Semiconductor – Automotive – Extended Temperature PSoC® Programmable System-on-Chip™

CY8C21334, CY8C21534
DC Programming Specifications
Table 14 lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75 V to 5.25 V and
–40 °C  T_A  125 °C. Typical parameters apply to 5 V at 25 °C and are for design guidance only.
Table 14. DC Programming Specifications
Symbol
Description
V_DDP
V_DD for programming and erase
Min Typ
4.5
5
V_DDLV
Low V_DD for verify
4.7
4.8
V_DDHV
High V_DD for verify
5.1
5.2
V_DDIWRITE Supply voltage for flash write operation
4.75 5.0
I_DDP
V_ILP
V_IHP
I_ILP
Supply current during programming or verify
–
5
Input low voltage during programming or verify –
–
Input high voltage during programming or verify 2.2
–
Input current when applying V_ILP to P1[0] or
–
–
P1[1] during programming or verify
I_IHP
Input current when applying V_IHP to P1[0] or
–
–
P1[1] during programming or verify
V_OLV
Output low voltage during programming or
verify
–
–
V_OHV
Output high voltage during programming or
3.5
–
verify
Flash_ENPB Flash endurance (per block)^[9]
Flash_ENT Flash endurance (total)^{[9, 10]}
Flash_DR Flash data retention^[11]
100
–
12,800 –
15
–
Max Units
Notes
5.5
V This specification applies to the
functional requirements of external
programmer tools
4.9
V This specification applies to the
functional requirements of external
programmer tools
5.3
V This specification applies to the
functional requirements of external
programmer tools
5.25
V This specification applies to this
device when it is executing internal
flash writes
25
mA
0.8
V
–
V
0.2 mA Driving internal pull-down resistor.
1.5 mA Driving internal pull-down resistor.
0.75
V
V_DD
V
–
– Erase/write cycles per block.
–
– Erase/write cycles.
– Years
Notes
9. For the full temperature range, the user must employ a temperature sensor user module (FlashTemp) or other temperature sensor, and feed the result to the
temperature argument before writing. Refer to the Flash APIs Application Note AN2015 for more information.
10. The maximum total number of allowed erase/write cycles is the minimum Flash_ENPB value multiplied by the number of flash blocks in the device.
11. Flash data retention based on the use condition of 7000 hours at T_A  125 °C and the remaining time at T_A  65 °C.
Document Number:38-12038 Rev. *J
Page 17 of 38