CY14B256KA_11 Datasheet, PDF (17/27 Pages) Cypress Semiconductor – 256-Kbit (32 K × 8) nvSRAM with Real Time Clock

CY14B256KA
Data Retention and Endurance
Parameter
DATA_R
NV_C
Description
Data retention
Nonvolatile STORE operations
Capacitance
Parameter^[10]
Description
C_IN
C_OUT
Input capacitance
Output capacitance
Thermal Resistance
Parameter^[10]
Θ_JA
Θ_JC
Description
Thermal resistance
(Junction to ambient)
Thermal resistance
(Junction to case)
Test Conditions
T_A = 25 °C, f = 1 MHz,
V_CC = V_CC (Typ)
Test Conditions
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, in accordance with EIA/JESD51.
3.0 V
OUTPUT
30 pF
577 Ω
R1
Figure 6. AC Test Loads
R2
789 Ω
3.0 V
OUTPUT
5 pF
Min
20
1,000
Max
7
7
48 SSOP
37.47
24.71
577 Ω
R1
Unit
Years
K
Unit
pF
pF
Unit
°C/W
°C/W
R2
789 Ω
AC Test Conditions
Input pulse levels....................................................0 V to 3 V
Input rise and fall times (10% - 90%)............................ <3 ns
Input and output timing reference levels........................ 1.5V
RTC Characteristics
Parameter
Description
Min
Typ^[11]
Max
Units
V_RTCbat
I_BAK[12]
RTC battery pin voltage
RTC backup current
1.8
3.0
3.6
V
T_A (Min)
–
25 °C
–
–
0.35
µA
0.35
–
µA
V_RTCcap[13]
RTC capacitor pin voltage
T_A (Max)
–
–
0.5
µA
T_A (Min)
1.6
–
3.6
V
25 °C
1.5
3.0
3.6
V
tOCS
RTC oscillator time to start
T_A (Max) 1.4
–
3.6
V
–
1
2
sec
t_RTCp
RTC processing time from end of ‘W’ bit set to ‘0’
–
–
350
μs
R_BKCHG
RTC backup capacitor charge current-limiting resistor
350
–
850
Ω
–
Notes
10. These parameters are guaranteed by design and are not tested.
11. Typical values are at 25 °C, V_CC= V_CC (Typ). Not 100% tested.
12. From either V_RTCcap or V_RTCbat.
13. If V_RTCcap > 0.5 V or if no capacitor is connected to V_RTCcap pin, the oscillator starts in tOCS time. If a backup capacitor is connected and V_RTCcap < 0.5 V, the capacitor
must be allowed to charge to 0.5 V for oscillator to start.
Document #: 001-55720 Rev. *C
Page 17 of 27
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