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CY7C1516JV18 Datasheet, PDF (15/26 Pages) Cypress Semiconductor – 72-Mbit DDR-II SRAM 2-Word Burst Architecture
TAP Controller Block Diagram
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
TDI
Selection
Circuitry
TCK
TMS
0
Bypass Register
210
Instruction Register
31 30 29 . . 2 1 0
Identification Register
108 . . . . 2 1 0
Boundary Scan Register
Selection
Circuitry
TAP Controller
TDO
TAP Electrical Characteristics
Over the Operating Range [10, 11, 12]
Parameter
Description
VOH1
VOH2
VOL1
VOL2
VIH
VIL
IX
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input and Output Load Current
Test Conditions
IOH = −2.0 mA
IOH = −100 μA
IOL = 2.0 mA
IOL = 100 μA
GND ≤ VI ≤ VDD
Min
Max
Unit
1.4
V
1.6
V
0.4
V
0.2
V
0.65VDD VDD + 0.3
V
–0.3 0.35VDD
V
–5
5
μA
Notes
10. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics Table.
11. Overshoot: VIH(AC) < VDDQ + 0.85V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > −1.5V (Pulse width less than tCYC/2).
12. All Voltage referenced to Ground.
Document Number: 001-12559 Rev. *C
Page 15 of 26
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