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CY7C1422BV18 Datasheet, PDF (10/28 Pages) Cypress Semiconductor – 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
PRELIMINARY
CY7C1422BV18
CY7C1429BV18
CY7C1423BV18
CY7C1424BV18
Write Cycle Descriptions (CY7C1422BV18 and CY7C1423BV18) [2, 8]
BWS0/NWS0 BWS1/NWS1 K
K
Comments
L
L
L-H - During the Data portion of a Write sequence:
CY7C1422BV18 − both nibbles (D[7:0]) are written into the device,
CY7C1423BV18 − both bytes (D[17:0]) are written into the device.
L
L
- L-H During the Data portion of a Write sequence:
CY7C1422BV18 − both nibbles (D[7:0]) are written into the device,
CY7C1423BV18 − both bytes (D[17:0]) are written into the device.
L
H
L-H - During the Data portion of a Write sequence:
CY7C1422BV18 − only the lower nibble (D[3:0]) is written into the device. D[7:4]
will remain unaltered,
CY7C1423BV18 − only the lower byte (D[8:0]) is written into the device. D[17:9]
will remain unaltered.
L
H
- L-H During the Data portion of a Write sequence:
CY7C1422BV18 − only the lower nibble (D[3:0]) is written into the device. D[7:4]
will remain unaltered,
CY7C1423BV18 − only the lower byte (D[8:0]) is written into the device. D[17:9]
will remain unaltered.
H
L
L-H – During the Data portion of a Write sequence:
CY7C1422BV18 − only the upper nibble (D[7:4]) is written into the device. D[3:0]
will remain unaltered,
CY7C1423BV18 − only the upper byte (D[17:9]) is written into the device. D[8:0]
will remain unaltered.
H
L
– L-H During the Data portion of a Write sequence:
CY7C1422BV18 − only the upper nibble (D[7:4]) is written into the device. D[3:0]
will remain unaltered,
CY7C1423BV18 − only the upper byte (D[17:9]) is written into the device. D[8:0]
will remain unaltered.
H
H
L-H – No data is written into the devices during this portion of a Write operation.
H
H
– L-H No data is written into the devices during this portion of a Write operation.
Note:
8. Assumes a Write cycle was initiated per the Write Cycle Description Truth Table. BWS0, BWS1 in the case of CY7C1422BV18 and CY7C1423BV18 and also
BWS2, BWS3 in the case of CY7C1424BV18 can be altered on different portions of a write cycle, as long as the set-up and hold requirements are achieved.
Document Number: 001-07035 Rev. *B
Page 10 of 28
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