S70GL02GT Datasheet, PDF (1/20 Pages) Cypress Semiconductor – 2-Gbit (256-Mbyte) 3.0V Flash Memory

S70GL02GT
2-Gbit (256-Mbyte)
3.0V Flash Memory
General Description
The Cypress S70GL02GT 2-Gigabit MirrorBit^® Flash memory device is fabricated on 45-nm MirrorBit^® Eclipse^™ process technology.
This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer
that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time
than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications
that require higher density, better performance and lower power consumption.
This document contains information for the S70GL02GT device, which is a dual-die stack of two S29GL01GT die. For detailed
specifications, please refer to the discrete die data sheet:
Document
S29GL01GT, S29GL512T Data Sheet
Cypress Document Number
002-00247
Distinctive Characteristics
 CMOS 3.0 Volt Core with Versatile I/O™
 Two 1024 Megabit (S29GL01GT) in a single 64-ball Fortified-
BGA package (see S29GL01GT datasheet for full
specifications)
 45 nm MirrorBit Eclipse process technology
 Single supply (V_CC) for read / program / erase (2.7V to 3.6V)
 Versatile I/O Feature
– Wide I/O voltage (V_IO): 1.65V to V_CC
 x8 and x16 data bus
 16-word/32-byte page read buffer
 512-byte Programming Buffer
– Programming in Page multiples, up to a maximum of
512 bytes
 Sector Erase
– Uniform 128-kbytes sectors
– S70GL02GT: two thousand forty-eight sectors
 Suspend and Resume commands for Program and Erase
operations
 Status Register, Data Polling, and Ready/Busy pin methods
to determine device status
 Advanced Sector Protection (ASP)
– Volatile and non-volatile protection methods for each
sector
 Separate 1024-bye One Time Program (OTP) array with two
lockable regions
– Available in each device Support for CFI (Common Flash
Interface)
 WP# input
– Protects the last sector of the device, regardless of sector
protection settings
 Temperature Range / Grade
– Industrial (–40°C to +85°C)
– Industrial Plus (–40°C to +105°C)
– Automotive, AEC-Q100 Grade 3 (-40°C to +85°C)
– Automotive, AEC-Q100 Grade 2 (-40°C to +105°C)
 100,000 Program-Erase cycles
 20-year data retention
 Packaging Options
– 64-ball LSH Fortified BGA, 13 mm x 11 mm
Performance Characteristics
Max. Read Access Times (ns) (Note 1)
Parameter
2 Gb
Random Access Time (t_ACC)
Page Access Time (t_PACC)
CE# Access Time (t_CE)
OE# Access Time (t_OE)
110
120
20
30
110
120
25
35
Notes
1. Access times are dependent on V_IO operating ranges. See Ordering Information on page 4 for further details.
2. Contact a sales representative for availability.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-13915 Rev. *A
• San Jose, CA 95134-1709 • 408-943-2600
Revised October 21, 2016