FM25V40 Datasheet, PDF (1/23 Pages) Cypress Semiconductor – 4-Mbit (512 K × 8) Serial (SPI) F-RAM

PRELIMINARY
FM25V40
4-Mbit (512 K × 8) Serial (SPI) F-RAM
4-Mbit (512 K × 8) Serial (SPI) F-RAM
Features
■ 4-Mbit ferroelectric random access memory (F-RAM) logically
organized as 512 K × 8
❐ High-endurance 100 trillion (10¹⁴) read/writes
❐ 10-year data retention
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Very fast serial peripheral interface (SPI)
❐ Up to 40-MHz frequency
❐ Direct hardware replacement for serial flash and EEPROM
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■ Sophisticated write protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4, 1/2, or entire array
■ Device ID
❐ Manufacturer ID and Product ID
■ Low power consumption
❐ 300 A active current at 1 MHz
❐ 120 A (typ) standby current
❐ 3 A sleep mode current
■ Low-voltage operation: V_DD = 2.0 V to 3.6 V
■ Commercial temperature –0 C to +70 C
■ Packages
❐ 8-pin small outline integrated circuit (SOIC) package
❐ 8-pin thin dual flat no leads (TDFN) package
■ Restriction of hazardous substances (RoHS) compliant
Functional Overview
The FM25V40 is a 4-Mbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
Unlike serial flash and EEPROM, the FM25V40 performs write
operations at bus speed. No write delays are incurred. Data is
written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The FM25V40 is capable of supporting
10¹⁴ read/write cycles, or 100 million times more write cycles
than EEPROM.
These capabilities make the FM25V40 ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The FM25V40 provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
FM25V40 uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
incorporates a read-only Device ID that allows the host to
determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
commercial temperature range of –0 C to +70 C.
Logic Block Diagram
WP
CS
HOLD
SCK
Instruction Decoder
Clock Generator
Control Logic
Write Protect
512 K x 8
F-RAM Array
Instruction Register
Address Register
19
8
Counter
SI
SO
Data I/O Register
3
Nonvolatile Status
Register
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-87288 Rev. *A
• San Jose, CA 95134-1709 • 408-943-2600
Revised February 4, 2014