FM25C160B-GA Datasheet, PDF (1/20 Pages) Cypress Semiconductor – 16-Kbit (2 K × 8) Serial (SPI) Automotive F-RAM

FM25C160B
16-Kbit (2 K × 8) Serial (SPI) Automotive
F-RAM
16-Kbit (2 K × 8) Serial (SPI) Automotive F-RAM
Features
■ 16-Kbit ferroelectric random access memory (F-RAM) logically
organized as 2 K × 8
❐ High-endurance 10 trillion (10¹³) read/writes
❐ 121-year data retention (See the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Very fast serial peripheral interface (SPI)
❐ Up to 15 MHz frequency
❐ Direct hardware replacement for serial flash and EEPROM
❐ Supports SPI mode 0 (0,0) and mode 3 (1,1)
■ Sophisticated write protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4, 1/2, or entire array
■ Low power consumption
❐ 300 A active current at 1 MHz
❐ 10 A (typ) standby current at +85 C
■ Voltage operation: V_DD = 4.5 V to 5.5 V
■ Automotive-E temperature: –40 C to +125 C
■ 8-pin small outline integrated circuit (SOIC) package
■ AEC Q100 Grade 1 compliant
■ Restriction of hazardous substances (RoHS) compliant
Functional Overview
The FM25C160B is a 16-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 121 years
while eliminating the complexities, overhead, and system level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
Unlike serial flash and EEPROM, the FM25C160B performs
write operations at bus speed. No write delays are incurred. Data
is written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The FM25C160B is capable of supporting
10¹³ read/write cycles, or 10 million times more write cycles than
EEPROM.
These capabilities make the FM25C160B ideal for nonvolatile
memory applications requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The FM25C160B provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
FM25C160B uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
specifications are guaranteed over an automotive-e temperature
range of –40 C to +125 C.
Logic Block Diagram
WP
CS
HOLD
SCK
Instruction Decoder
Clock Generator
Control Logic
Write Protect
2Kx8
F-RAM Array
Instruction Register
Address Register
11
8
Counter
SI
SO
Data I/O Register
3
Nonvolatile Status
Register
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-86150 Rev. *A
• San Jose, CA 95134-1709 • 408-943-2600
Revised January 23, 2014