FM24V01A Datasheet, PDF (1/19 Pages) Cypress Semiconductor – 128-Kbit (16K × 8) Serial (I2C) F-RAM

FM24V01A
128-Kbit (16K × 8) Serial (I²C) F-RAM
128-Kbit (16K × 8) Serial (I2C) F-RAM
Features
■ 128-Kbit ferroelectric random access memory (F-RAM)
logically organized as 16K × 8
❐ High-endurance 100 trillion (10¹⁴) read/writes
❐ 151-year data retention (See the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Fast two-wire serial interface (I²C)
❐ Up to 3.4-MHz frequency^[1]
❐ Direct hardware replacement for serial EEPROM
❐ Supports legacy timings for 100 kHz and 400 kHz
■ Device ID
❐ Manufacturer ID and Product ID
■ Low power consumption
❐ 175-A active current at 100 kHz
❐ 150-A standby current
❐ 8-A sleep mode current
■ Low-voltage operation: V_DD = 2.0 V to 3.6 V
■ Industrial temperature: –40 C to +85 C
■ 8-pin small outline integrated circuit (SOIC) package
■ Restriction of hazardous substances (RoHS) compliant
Functional Description
The FM24V01A is a 128-Kbit nonvolatile memory employing an
advanced ferroelectric process. An F-RAM is nonvolatile and
performs reads and writes similar to a RAM. It provides reliable
data retention for 151 years while eliminating the complexities,
overhead, and system-level reliability problems caused by
EEPROM and other nonvolatile memories.
Unlike EEPROM, the FM24V01A performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. F-RAM also exhibits much lower power during writes
than EEPROM because write operations do not require an
internally elevated power supply voltage for write circuits. The
FM24V01A is capable of supporting 10¹⁴ read/write cycles, or
100 million times more write cycles than EEPROM.
These capabilities make the FM24V01A ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with
less overhead for the system.
The FM24V01A provides substantial benefits to users of serial
EEPROM as a hardware drop-in replacement. The device
incorporates a read-only Device ID that allows the host to
determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
industrial temperature range of –40 C to +85 C.
For a complete list of related resources, click here.
Logic Block Diagram
Counter
Address
Latch
14
16 K x 8
F-RAM Array
8
SDA
SCL
WP
A0-A2
Serial to Parallel
Converter
Control Logic
Data Latch
8
8
Device ID and
Manufacturer ID
Note
1.
The FM24V01A does not meet the NXP I²C specification in
to the DC Electrical Characteristics table for more details.
the
Fast-mode
Plus
(Fm+,
1
MHz)
for
I_OL
and
in
the
High
Speed
Mode
(Hs-mode,
3.4
MHz)
for
V_hys.
Refer
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-90869 Rev. *H
• San Jose, CA 95134-1709 • 408-943-2600
Revised January 14, 2016