FM18W08 Datasheet, PDF (1/12 Pages) Ramtron International Corporation – 256Kb Wide Voltage Bytewide F-RAM

Pre-Production
FM18W08
256Kb Wide Voltage Bytewide F-RAM
Features
256Kbit Ferroelectric Nonvolatile RAM
Organized as 32,768 x 8 bits
High Endurance 100 Trillion (10¹⁴) Read/Writes
38 year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Superior to BBSRAM Modules
No Battery Concerns
Monolithic Reliability
True Surface Mount Solution, No Rework Steps
Superior for Moisture, Shock, and Vibration
Resistant to Negative Voltage Undershoots
Description
The FM18W08 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile but operates in other respects as a RAM.
It provides data retention for 38 years while
eliminating the reliability concerns, functional
disadvantages and system design complexities of
battery-backed SRAM (BBSRAM). Fast write timing
and high write endurance make F-RAM superior to
other types of nonvolatile memory.
In-system operation of the FM18W08 is very similar
to other RAM devices. Minimum read- and write-
cycle times are equal. The F-RAM memory, however,
is nonvolatile due to its unique ferroelectric memory
process. Unlike BBSRAM, the FM18W08 is a truly
monolithic nonvolatile memory. It provides the same
functional benefits of a fast write without the
disadvantages associated with modules and batteries
or hybrid memory solutions.
These capabilities make the FM18W08 ideal for
nonvolatile memory applications requiring frequent
or rapid writes in a bytewide environment. The
availability of a true surface-mount package improves
the manufacturability of new designs. Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
SRAM & EEPROM Compatible
JEDEC 32Kx8 SRAM & EEPROM pinout
70 ns Access Time
130 ns Cycle Time
Low Power Operation
Wide Voltage Operation 2.7V to 5.5V
12 mA Active Current
20 A (typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40 C to +85 C
28-pin “Green”/RoHS SOIC Package
Pin Configuration
A14
1
A12
2
A7
3
A6
4
A5
5
A4
6
A3
7
A2
8
A1
9
A0
10
DQ0
11
DQ1
12
DQ2
13
VSS
14
28
VDD
27
WE
26
A13
25
A8
24
A9
23
A11
22
OE
21
A10
20
CE
19
DQ7
18
DQ6
17
DQ5
16
DQ4
15
DQ3
Ordering Information
FM18W08-SG 28-pin “Green” SOIC
This is a product in the pre-production phase of development. Device characterization is complete and Ramtron does not expect to
change the specifications. Ramtron will issue a Product Change Notice if any specification changes are made.
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document Number: 001-86207 Rev. **
Revised February 25, 2013