CYRS1049DV33 Datasheet, PDF (1/16 Pages) Cypress Semiconductor – 4-Mbit (512 K × 8) Static RAM

CYRS1049DV33
4-Mbit (512 K × 8) Static RAM
with RadStop™ Technology
4-Mbit (512 K × 8) Static RAM with RadStop™ Technology
Radiation Performance
Radiation Data
❥ Total dose 300 Krad
❥ Soft error rate (both heavy ion and proton)
Heavy ions  1 × 10^-10 upsets/bit-day with single-error
correction, double error detection error detection and
correction (SEC-DED EDAC)
❥ Neutron = 2.0 × 10¹⁴ N/cm²
❥ Dose rate > 2.0 × 10⁹ (rad(Si)/s)
❥ Latch up immunity LET = 120 MeV.cm²/mg (125 C)
Processing Flows
❥ V grade - Class V flow in compliance with MIL-PRF 38535
Prototyping Options
❥ Non qualified manufacturers list (QML) V grade
CYPT1049DV33 devices with same functional and timing
characteristics in a 36-pin ceramic flat package
Features
❥ Temperature ranges
❥ Military/Space: –55 °C to 125 °C
❥ High speed
❥ t_AA = 12 ns
❥ Low active power
❥ I_CC = 95 mA at 12 ns (P_MAX = 315 mW)
❥ Low CMOS standby power
❥ I_SB2 = 15 mA
❥ 2.0 V data retention
❥ Automatic power-down when deselected
❥ Transistor-transistor logic (TTL) compatible inputs and outputs
❥ Easy memory expansion with CE and OE features
❥ Available in Pb-free 36-pin ceramic flat package
Logic Block Diagram
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
CE
WE
OE
INPUT BUFFER
512K x 8
ARRAY
COLUMN DECODER
POWER
DOWN
I^IO^/O₀0
IIO/O_{1 1}
II/OO₂₂
IIO/O_{3 3}
IIO/O_{4 4}
IIO/O_{5 5}
IIO/O₆ 6
IIO/O_{7 7}
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-64292 Rev. *C
• San Jose, CA 95134-1709 • 408-943-2600
Revised March 19, 2012