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CYK512K16SCCA Datasheet, PDF (1/10 Pages) Cypress Semiconductor – 8-Mbit (512K x 16) Pseudo Static RAM
CYK512K16SCCA
MoBL®
8-Mbit (512K x 16) Pseudo Static RAM
Features
• Advanced low-power MoBL® architecture
• High speed: 55 ns, 70 ns
• Wide voltage range: 2.7V to 3.3V
• Typical active current: 2 mA @ f = 1 MHz
• Typical active current: 11 mA @ f = fMAX
• Low standby power
• Automatic power-down when deselected
Functional Description[1]
The CYK512K16SCCA is a high-performance CMOS pseudo
static RAM (PSRAM) organized as 512K words by 16 bits that
supports an asynchronous memory interface. This device
features advanced circuit design to provide ultra-low active
current. This is ideal for providing More Battery Life™ (MoBL)
in portable applications such as cellular telephones. The
device can be put into standby mode reducing power
consumption dramatically when deselected (CE1 LOW, CE2
HIGH or both BHE and BLE are HIGH). The input/output pins
(I/O0 through I/O15) are placed in a high-impedance state
when: deselected (CE1 HIGH, CE2 LOW), OE is deasserted
HIGH, or during a write operation (Chip Enabled and Write
Enable WE LOW). Reading from the device is accomplished
by asserting the Chip Enables (CE1 LOW and CE2 HIGH) and
Output Enable (OE) LOW while forcing the Write Enable (WE)
HIGH. If Byte Low Enable (BLE) is LOW, then data from the
memory location specified by the address pins will appear on
I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from
memory will appear on I/O8 to I/O15. See the Truth Table for a
complete description of read and write modes.
Logic Block Diagram
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
DATA IN DRIVERS
512K x 16
RAM Array
I/O0–I/O7
I/O8–I/O15
COLUMN DECODER
Power -Down
Circuit
BHE
BLE
BHE
WE
OE
BLE
CE2
CE1
CE2
CE1
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Cypress Semiconductor Corporation • 3901 North First Street • San Jose, CA 95134 • 408-943-2600
Document #: 38-05425 Rev. *E
Revised January 25, 2005