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CYDM064B16_11 Datasheet, PDF (1/27 Pages) Cypress Semiconductor – 1.8V 4K/8K/16K x 16 MoBL® Dual-Port Static RAM | |||
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CYDM064B16
CYDM128B16
CYDM256B16
1.8V 4K/8K/16K x 16
MoBL® Dual-Port Static RAM
1.8V 4K/8K/16K x 16 MoBL® Dual-Port Static RAM
Features
â True dual ported memory cells that allow simultaneous access
of the same memory location
â 4, 8, or 16K Ã 16 organization
â Ultra Low operating power
â Active: ICC = 15 mA (typical) at 55 ns
â Standby: ISB3 = 2 μA (typical)
â Small footprint: available in a 6x6 mm 100-pin Pb-free vfBGA
â Port independent 1.8V, 2.5V, and 3.0V I/Os
â Full asynchronous operation
â Automatic power down
â Pin select for Master or Slave
â Expandable data bus to 32-bits with Master or Slave chip select
when using more than one device
â On-chip arbitration logic
â Semaphores included to permit software handshaking
between ports
â Input read registers and output drive registers
â INT flag for port-to-port communication
â Separate upper-byte and lower-byte control
â Industrial temperature ranges
Selection Guide for VCC = 1.8V
Parameter
CYDM256B16, CYDM128B16, CYDM064B16
Unit
(-55)
Port I/O Voltages (P1-P2)
1.8V -1.8V
V
Maximum Access Time
55
ns
Typical Operating Current
15
mA
Typical Standby Current for ISB1
2
μA
Typical Standby Current for ISB3
2
μA
Selection Guide for VCC = 2.5V
Parameter
CYDM256B16, CYDM128B16, CYDM064B16
Unit
(-55)
Port I/O Voltages (P1-P2)
2.5V-2.5V
V
Maximum Access Time
55
ns
Typical Operating Current
28
mA
Typical Standby Current for ISB1
6
μA
Typical Standby Current for ISB3
4
μA
Selection Guide for VCC = 3.0V
Parameter
CYDM256B16, CYDM128B16, CYDM064B16
Unit
(-55)
Port I/O Voltages (P1-P2)
3.0V-3.0V
V
Maximum Access Time
55
ns
Typical Operating Current
42
mA
Typical Standby Current for ISB1
7
μA
Typical Standby Current for ISB3
6
μA
Cypress Semiconductor Corporation ⢠198 Champion Court
Document #: 001-00217 Rev. *H
⢠San Jose, CA 95134-1709 ⢠408-943-2600
Revised March 1, 2011
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