CY9C62256_05 Datasheet, PDF (1/11 Pages) Cypress Semiconductor – 32K x 8 Magnetic Nonvolatile CMOS RAM

PRELIMINARY
CY9C62256
32K x 8 Magnetic Nonvolatile CMOS RAM
Features
• 100% form, fit, function-compatible with 32K × 8
micropower SRAM (CY62256)
— Fast Read and Write access: 70 ns
— Voltage range: 4.5V–5.5V operation
— Low power: 330 mW Active; 495 µW standby
— Easy memory expansion with CE and OE features
— TTL-compatible inputs and outputs
— Automatic power-down when deselected
• Replaces 32K × 8 Battery Backed (BB)SRAM, SRAM,
EEPROM, FeRAM or Flash memory
• Data is automatically Write protected during power loss
• Write Cycles Endurance: > 10¹⁵ cycles
• Data Retention: > 10 Years
• Shielded from external magnetic fields
• Extra 64 Bytes for device identification and tracking
• Temperature ranges
— Commercial: 0°C to 70°C
— Industrial: – 40°C to 85°C
• JEDEC STD 28-pin (300-mil) SOIC, and 28-pin TSOP-1
packages. Also available in 450-mil wide (300-mil body
width) 28-pin narrow SOIC.
Logic Block Diagram
A₁₁
A₁₀
A₉
A₈
A₇
A₆
A₃
A₂
A₁
CE
WE
OE
INPUTBUFFER
Silicon Sig.
512x512
ARRAY
COLUMN
DECODER
POWER
DOWN &
WRITE
PROTECT
Functional Description
The CY9C62256 is a high-performance CMOS nonvolatile
RAM employing an advanced magnetic RAM (MRAM)
process. An MRAM is nonvolatile memory that operates as a
fast read and write RAM. It provides data retention for more
than ten years while eliminating the reliability concerns,
functional disadvantages and system design complexities of
battery-backed SRAM, EEPROM, Flash and FeRAM. Its fast
writes and high write cycle endurance makes it superior to
other types of nonvolatile memory.
The CY9C62256 operates very similarly to SRAM devices.
Memory read and write cycles require equal times. The MRAM
memory is nonvolatile due to its unique magnetic process.
Unlike BBSRAM, the CY9C62256 is truly a monolithic nonvol-
atile memory. It provides the same functional benefits of a fast
write without the serious disadvantages associated with
modules and batteries or hybrid memory solutions.
These capabilities make the CY9C62256 ideal for nonvolatile
memory applications requiring frequent or rapid writes in a
bytewide environment.
The CY9C62256 is offered in both commercial and industrial
temperature ranges.
I/O₀
I/O₁
I/O₂
I/O₃
OE
I/O₄
A₁
A₂
I/O₅
A₃
A₄
I/O₆
WE
V_CC
A₅
I/O₇
A₆
A7
A₈
A₉
A₁₀
A₁₁
Pin Configurations
SOIC
Top View
A₅ 1
A₆ 2
A₇ 3
A₈ 4
A_{9 5}
A_{10 6}
A_{11 7}
A₁₂ 8
A₁₃ 9
A₁₄ 10
I/O₀ 11
I/O₁ 12
I/O₂ 13
GND 14
28 V_CC
27 WE
26 _A4
25 A3
24 _A2
23 A₁
22 OE
21 A₀
20 CE
19
18
I/O₇
I/O₆
17 I/O₅
16 I/O₄
15 I/O₃
22
21 A₀
23
20 _CE
24
19 I/O₇
25
18 I/O₆
26
17 I/O₅
27
TSOP I
16 I/O₄
28
Top View
15 I/O₃
1
(not to scale)
14 GND
2
13 I/O₂
3
12 I/O₁
4
11 I/O₀
5
10 A₁₄
6
9 A₁₃
7
8 _A12
Cypress Semiconductor Corporation • 3901 North First Street • San Jose, CA 95134 • 408-943-2600
Document#: 38-15001 Rev. *F
Revised March 21, 2005