CY7C199N Datasheet, PDF (1/10 Pages) Cypress Semiconductor – 32K x 8 Static RAM

CY7C199N
Features
• High speed
— 12 ns
• Fast t_DOE
• CMOS for optimum speed/power
• Low active power
— 467 mW (max, 12 ns “L” version)
• Low standby power
— 0.275 mW (max, “L” version)
• 2V data retention (“L” version only)
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
Logic Block Diagram
A₀
A₁
A₂
A₃
A₄
A₅
A₆
A₇
A₈
A₉
CE
WE
OE
INPUT BUFFER
1024 x 32 x 8
ARRAY
COLUMN
DECODER
POWER
DOWN
Selection Guide
-12
Maximum Access Time
12
Maximum Operating Current
160
L
90
Maximum CMOS Standby Current
10
L
0.05
32K x 8 Static RAM
Functional Description
The CY7C199N is a high-performance CMOS static RAM
organized as 32,768 words by 8 bits. Easy memory expansion
is provided by an active LOW Chip Enable (CE) and active
LOW Output Enable (OE) and three-state drivers. This device
has an automatic power-down feature, reducing the power
consumption by 81% when deselected. The CY7C199NN is in
the standard 300-mil-wide DIP, SOJ, and LCC packages.
An active LOW Write Enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O₀ through I/O₇) is written into the memory location
addressed by the address present on the address pins (A₀
through A₁₄). Reading the device is accomplished by selecting
the device and enabling the outputs, CE and OE active LOW,
while WE remains inactive or HIGH. Under these conditions,
the contents of the location addressed by the information on
address pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. A die coat is used to improve alpha immunity.
Pin Configurations
DIP
Top View
I/O₀
I/O₁
I/O₂
I/O₃
OE
22
A₁
23
I/O₄
A₂
24
A₃
25
A₄
26
I/O₅
WE
V _CC
27
28
A₅
1
I/O₆
A₆
2
A7
3
I/O₇
A₈
4
A₉
5
A ₁₀
6
A ₁₁
7
A₅ 1
A_{6 2}
A₇ 3
A_{8 4}
A_{9 5}
A_{10 6}
A_{11 7}
A_{12 8}
A_{13 9}
A₁₄ 10
I/O₀ 11
I/O₁ 12
I/O₂ 13
GND 14
TSOP I
Top View
(not to scale)
28 VCC
27 WE
26 A₄
25 A3
24 _A2
23 _A1
22 _OE
21 A₀
20 CE
19 I/O₇
18 I/O₆
17 _I/O5
16 I/O₄
15 I/O₃
21 A ₀
20 _CE
19 I/O ₇
18 I/O 6
17 I/O 5
16 I/O ₄
15 ^I/O 3
14 GND
13 I/O 2
12 I/O ₁
11 I/O ₀
10 A 14
9 A ₁₃
8 A ₁₂
-15
-20
-25
-35
-55
Unit
15
20
25
35
55
ns
155
150
150
140
140
mA
90
90
80
70
70
10
10
10
10
10
mA
0.05
0.05
0.05
0.05
0.05
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 001-06493 Rev. **
Revised February 2, 2006
[+] Feedback