CY7C199C_06 Datasheet, PDF (1/13 Pages) Cypress Semiconductor – 256K (32K x 8) Static RAM

CY7C199C
256K (32K x 8) Static RAM
Features
• Fast access time: 12 ns
• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)
• CMOS for optimum speed/power
• TTL–compatible Inputs and Outputs
• 2.0V Data Retention
• Low CMOS standby power
• Automated Power-down when deselected
• Available in Pb-free and non Pb-free 28-pin (300-Mil)
Molded SOJ, 28-pin (300-Mil) DIP and 28-pin TSOP I
packages
General Description
The CY7C199C is a high-performance CMOS Asynchronous
SRAM organized as 32K by 8 bits that supports an
asynchronous memory interface. The device features an
automatic power-down feature that significantly reduces
power consumption when deselected.
See the Truth Table in this data sheet for a complete
description of read and write modes
Logic Block Diagram
Input Buffer
RAAM^32RKRxAAY8 rray
I/Ox
Column Decoder
Power
Down
Circuit
X
CE
WE
OE
A
X
Product Portfolio
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current (L)
12 ns
12
85
15 ns
15
80
500
20 ns
20
75
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Unit
ns
mA
µA
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 38-05408 Rev. *C
Revised August 3, 2006
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