CY7C194BN_11 Datasheet, PDF (1/15 Pages) Cypress Semiconductor – 256 Kb (64 K × 4) Static RAM Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V)

CY7C194BN
256 Kb (64 K × 4) Static RAM
256 Kb (64 K × 4) Static RAM
Features
■ Fast access time: 15 ns
■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V)
■ Complementary metal oxide semiconductor (CMOS) for
optimum speed/power
■ Transistor transistor logic (TTL) compatible inputs and outputs
■ CY7C194BN is available in 24-pin DIP, 24-pin SOJ packages.
General Description
The CY7C194BN is a high-performance CMOS Asynchronous
SRAM organized as 64 K × 4 bits that supports an asynchronous
memory interface. The device features an automatic
power-down feature that significantly reduces power
consumption when deselected.
See the Truth Table in this data sheet for a complete description
of read and write modes.
The CY7C194BN is available in 24-pin DIP, 24-pin SOJ
package(s).
Logic Block Diagram
Input Buffer
RAM Array
Column Decoder
I/Ox
Power
Down
Circuit
X
CE
WE
OE
(7C195 only)
A_X
Cypress Semiconductor Corporation • 198 Champion Court
Document #: 001-06446 Rev. *D
• San Jose, CA 95134-1709 • 408-943-2600
Revised June 2, 2011
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