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CY7C188_06 Datasheet, PDF (1/7 Pages) Cypress Semiconductor – 32K x 9 Static RAM
CY7C188
32K x 9 Static RAM
Features
• High speed
— 15 ns
• Automatic power-down when deselected
• Low active power
— 660 mW
• Low standby power
— 55 mW
• CMOS for optimum speed/power
• TTL-compatible inputs and outputs
• Easy memory expansion with CE1, CE2, and OE
features
• Available in non Pb-free 32-Lead (300-Mil) Molded SOJ
Logic Block Diagram
Functional Description
The CY7C188 is a high-performance CMOS static RAM
organized as 32,768 words by 9 bits. Easy memory expansion
is provided by an active-LOW chip enable (CE1), an
active-HIGH chip enable (CE2), an active-LOW output enable
(OE), and tri-state drivers. The device has an automatic
power-down feature that reduces power consumption by more
than 75% when deselected.
Writing to the device is accomplished by taking CE1 and write
enable (WE) inputs LOW and CE2 input HIGH. Data on the
nine I/O pins (I/Oo – I/O8) is then written into the location
specified on the address pins (A0 – A14).
Reading from the device is accomplished by taking CE1 and
OE LOW while forcing WE and CE2 HIGH. Under these condi-
tions, the contents of the memory location specified by the
address pins will appear on the I/O pins.
The nine input/output pins (I/O0 – I/O8) are placed in a
high-impedance state when the device is deselected (CE1
HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or
during a write operation (CE1 LOW, CE2 HIGH, and WE LOW).
The CY7C188 is available in standard 300-mil-wide SOJ.
Pin Configuration
A0
A1
A2
A3
A4
A5
A6
CE1
CE2
WE
OE
INPUT BUFFER
32K x 9
ARRAY
COLUMN
DECODER
POWER
DOWN
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
C188–1
SOJ
Top View
NC 1
NC 2
A8 3
A7 4
A6 5
A5 6
A4 7
A3 8
A2 9
A1 10
A0 11
I/O0 12
I/O1 13
I/O2 14
I/O3 15
GND 16
32 VCC
31 A14
30 CE2
29 WE
28 A13
27 A9
26 A10
25 A11
24 OE
23 A12
22 CE1
21 I/O8
20 I/O7
19 I/O6
18 I/O5
17 I/O4
C188–2
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 38-05053 Rev. *A
Revised September 28, 2006