CY7C1480V25_06 Datasheet, PDF (1/31 Pages) Cypress Semiconductor – 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM

CY7C1480V25
CY7C1482V25
CY7C1486V25
72-Mbit (2M x 36/4M x 18/1M x 72)
Pipelined Sync SRAM
Features
Functional Description^[1]
• Supports bus operation up to 250 MHz
• Available speed grades are 250, 200 and 167 MHz
• Registered inputs and outputs for pipelined operation
• 2.5V core power supply
• 2.5V/1.8V I/O operation
• Fast clock-to-output time
— 3.0 ns (for 250-MHz device)
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel^®
Pentium^® interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Single Cycle Chip Deselect
• CY7C1480V25, CY7C1482V25 available in
JEDEC-standard lead-free 100-pin TQFP, lead-free and
non-lead-free 165-ball FBGA package. CY7C1486V25
available in lead-free and non-lead-free 209 ball FBGA
package.
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• “ZZ” Sleep Mode Option
The CY7C1480V25/CY7C1482V25/CY7C1486V25 SRAM
integrates 2M x 36/4M x 18/1M × 72 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE₁), depth-expansion Chip Enables (CE₂ and CE₃), Burst
Control inputs (ADSC, ADSP, and ADV), Write Enables (BW_X,
and BWE), and Global Write (GW). Asynchronous inputs
include the Output Enable (OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to two or four bytes wide as
controlled by the byte write control inputs. GW when active
LOW causes all bytes to be written.
The CY7C1480V25/CY7C1482V25/CY7C1486V25 operates
from a +2.5V core power supply while all outputs may operate
with either a +2.5 or +1.8V supply. All inputs and outputs are
JEDEC-standard JESD8-5-compatible.
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
250 MHz
3.0
450
120
200 MHz
3.0
450
120
167 MHz
3.4
400
120
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com
Unit
ns
mA
mA
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 38-05282 Rev. *G
Revised July 24, 2006
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