CY7C1470BV25_13 Datasheet, PDF (1/29 Pages) Cypress Semiconductor – 72-Mbit (2 M x 36/4 M x 18) Pipelined SRAM with NoBL™ Architecture

CY7C1470BV25
CY7C1472BV25
72-Mbit (2 M × 36/4 M × 18)
Pipelined SRAM with NoBL™ Architecture
72-Mbit (2 M × 36/4 M × 18) Pipelined SRAM with NoBL™ Architecture
Features
■ Pin-compatible and functionally equivalent to ZBT™
■ Supports 250 MHz bus operations with zero wait states
❐ Available speed grades are 250, 200, and 167 MHz
■ Internally self-timed output buffer control to eliminate the need
to use asynchronous OE
■ Fully registered (inputs and outputs) for pipelined operation
■ Byte Write capability
■ Single 2.5 V power supply
■ 2.5 V I/O supply (V_DDQ)
■ Fast clock-to-output times
❐ 3.0 ns (for 250-MHz device)
■ Clock Enable (CEN) pin to suspend operation
■ Synchronous self-timed writes
■ CY7C1470BV25 available in JEDEC-standard Pb-free 100-pin
TQFP and Pb-free 165-ball FBGA package. CY7C1472BV25
available in JEDEC-standard Pb-free 100-pin TQFP
■ IEEE 1149.1 JTAG Boundary Scan compatible
■ Burst capability – linear or interleaved burst order
■ “ZZ” Sleep Mode option and Stop Clock option
Functional Description
The CY7C1470BV25 and CY7C1472BV25 are 2.5 V,
2 M × 36/4 M × 18 synchronous pipelined burst SRAMs with No
Bus Latency™ (NoBL logic, respectively. They are designed
to support unlimited true back-to-back read or write operations
with no wait states. The CY7C1470BV25 and CY7C1472BV25
are equipped with the advanced (NoBL) logic required to enable
consecutive read or write operations with data being transferred
on every clock cycle. This feature dramatically improves the
throughput of data in systems that require frequent read or write
transitions. The CY7C1470BV25 and CY7C1472BV25 are
pin-compatible and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. The clock
input is qualified by the Clock Enable (CEN) signal, which when
deasserted suspends operation and extends the previous clock
cycle. Write operations are controlled by the Byte Write Selects
(BW_a–BW_d for CY7C1470BV25 and BW_a–BW_b for
CY7C1472BV25) and a Write Enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE₁, CE₂, CE₃) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. To avoid bus contention,
the output drivers are synchronously tri-stated during the data
portion of a write sequence.
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Description
250 MHz
3.0
450
120
200 MHz
3.0
450
120
167 MHz Unit
3.4
ns
400
mA
120
mA
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-15032 Rev. *K
• San Jose, CA 95134-1709 • 408-943-2600
Revised February 25, 2013