CY7C1399BN_09 Datasheet, PDF (1/8 Pages) Cypress Semiconductor – 256K (32K x 8) Static RAM

CY7C1399BN
256K (32K x 8) Static RAM
Features
• Temperature Ranges
— Industrial: –40°C to 85°C
— Automotive-A: –40°C to 85°C
• Single 3.3V power supply
• Ideal for low-voltage cache memory applications
• High speed: 12 ns
• Low active power
— 180 mW (max.)
• Low-power alpha immune 6T cell
• Available in Pb-free and non Pb-free Plastic SOJ and
TSOP I packages
Functional Description^[1]
The CY7C1399BN is a high-performance 3.3V CMOS Static
RAM organized as 32,768 words by 8 bits. Easy memory
Logic Block Diagram
A₀
A₁
A₂
AA₃₄
A₅
A₆
A₇
A₈
A₉
CE
WE
OE
INPUT BUFFER
32K x 8
ARRAY
COLUMN
DECODER
POWER
DOWN
expansion is provided by an active LOW Chip Enable (CE) and
active LOW Output Enable (OE) and tri-state drivers. The
device has an automatic power-down feature, reducing the
power consumption by more than 95% when deselected.
An active LOW Write Enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O₀ through I/O₇) is written into the memory location
addressed by the address present on the address pins (A₀
through A₁₄). Reading the device is accomplished by selecting
the device and enabling the outputs, CE and OE active LOW,
while WE remains inactive or HIGH. Under these conditions,
the contents of the location addressed by the information on
address pins is present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. The CY7C1399BN is available in 28-pin
standard 300-mil-wide SOJ and TSOP Type I packages.
Pin Configurations
SOJ
Top View
A₅ 1
28 V_CC
A_{6 2}
27 WE
A_{7 3}
26 A₄
I/O₀
A_{8 4}
25 A₃
I/O₁
A_{9 5}
A_{10 6}
24 _A2
23 _A1
I/O₂
A_{11 7}
A_{12 8}
22 _OE
21 A₀
I/O₃
A_{13 9}
20 _CE
A₁₄ 10
19 I/O₇
I/O₄
I/O₀ 11
18 I/O₆
I/O₅
I/O₁ 12
17 _I/O5
I/O₂ 13
16 _I/O4
I/O₆
GND 14
15 I/O₃
I/O₇
Selection Guide
-12
Maximum Access Time (ns)
12
Maximum Operating Current (mA)
55
Maximum CMOS Standby Current (µA) Commercial
500
Commercial (L)
50
Industrial
500
Automotive-A
-15
-20
15
20
50
45
500
500
50
50
500
500
Note:
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 001-06490 Rev. *A
Revised August 31, 2006