CY7C1386DV25 Datasheet, PDF (1/30 Pages) Cypress Semiconductor – 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM

CY7C1386DV25, CY7C1386FV25
CY7C1387DV25, CY7C1387FV25
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM
Features
Functional Description ^[1]
• Supports bus operation up to 250 MHz
• Available speed grades are 250, 200, and 167 MHz
• Registered inputs and outputs for pipelined operation
• Optimal for performance (Double-Cycle deselect)
• Depth expansion without wait state
• 2.5V + 5% power supply (V_DD)
• Fast clock-to-output times, 2.6 ns (for 250 MHz device)
• Provides high-performance 3-1-1-1 access rate
• User selectable burst counter supporting Intel^® Pentium^®
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self timed writes
• Asynchronous output enable
• CY7C1386DV25/CY7C1387DV25 available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non
Pb-free 165-ball FBGA package.
CY7C1386FV25/CY7C1387FV25 available in Pb-free and
non Pb-free 119-ball BGA package
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• ZZ sleep mode option
The CY7C1386DV25/CY7C1387DV25/CY7C1386FV25/
CY7C1387FV25 SRAM integrates 512K x 36 and 1M x 18
SRAM cells with advanced synchronous peripheral circuitry
and a two-bit counter for internal burst operation. All
synchronous inputs are gated by registers controlled by a
positive edge triggered clock input (CLK). The synchronous
inputs include all addresses, all data inputs, address-pipelining
chip enable (CE₁), depth expansion chip enables (CE₂ and
CE₃ ^[2]), burst control inputs (ADSC, ADSP, and ADV), write
enables (BW_X, and BWE), and global write (GW).
Asynchronous inputs include the output enable (OE) and the
ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either address strobe processor (ADSP) or
address strobe controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self timed write cycle.This part supports byte write
operations (see Pin Definitions on page 6 and Truth Table ^[4,
5, 6, 7, 8, 9] _{on page 9 for further details). Write cycles can be}
one to four bytes wide as controlled by the byte write control
inputs. GW active _LOW causes all bytes to be written. This
device incorporates an additional pipelined enable register
which delays turning off the output buffers an additional cycle
when a deselect is executed.This feature allows depth
expansion without penalizing system performance.
The CY7C1386DV25/CY7C1387DV25/CY7C1386FV25/
CY7C1387FV25 operates from a +2.5V power supply. All
inputs and outputs are JEDEC-standard and
JESD8-5-compatible.
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
250 MHz
200 MHz
167 MHz
Unit
2.6
3.0
3.4
ns
350
300
275
mA
70
70
70
mA
Notes
1. For best practices or recommendations, please refer to the Cypress application note AN1064, SRAM System Design Guidelines on www.cypress.com.
2. CE_3, CE₂ are for TQFP and 165 FBGA packages only. 119 BGA is offered only in 1 chip enable.
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document Number: 38-05548 Rev. *E
Revised Feburary 15, 2007