CY7C1355C_12 Datasheet, PDF (1/33 Pages) Cypress Semiconductor – 9-Mbit (256 K × 36 / 512 K × 18) Flow-Through SRAM with NoBL™ Architecture

CY7C1355C, CY7C1357C
9-Mbit (256 K × 36 / 512 K × 18) Flow-Through
SRAM with NoBL™ Architecture
9-Mbit (256 K × 36 / 512 K × 18) Flow-through SRAM with NoBL™ Architecture
Features
■ No Bus Latency™ (NoBL™) architecture eliminates dead
cycles between write and read cycles
■ Can support up to 133-MHz bus operations with zero wait
states
❐ Data is transferred on every clock
■ Pin compatible and functionally equivalent to ZBT™ devices
■ Internally self-timed output buffer control to eliminate the need
to use OE
■ Registered inputs for flow-through operation
■ Byte write capability
■ 3.3 V / 2.5 V I/O power supply (V_DDQ)
■ Fast clock-to-output times
❐ 6.5 ns (for 133-MHz device)
■ Clock enable (CEN) pin to enable clock and suspend operation
■ Synchronous self-timed writes
■ Asynchronous output enable
■ Available in JEDEC-standard and Pb-free 100-pin TQFP and
165-ball FBGA package
■ Three chip enables for simple depth expansion.
■ Automatic power-down feature available using ZZ mode or CE
deselect
■ IEEE 1149.1 JTAG-compatible boundary scan
■ Burst capability – linear or interleaved burst order
■ Low standby power
Functional Description
The CY7C1355C/CY7C1357C is a 3.3 V, 256 K × 36 / 512 K × 18
synchronous flow-through burst SRAM designed specifically to
support unlimited true back-to-back read/write operations
without the insertion of wait states. The
CY7C1355C/CY7C1357C is equipped with the advanced
No Bus Latency (NoBL) logic required to enable consecutive
read/write operations with data being transferred on every clock
cycle. This feature dramatically improves the throughput of data
through the SRAM, especially in systems that require frequent
write-read transitions.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. The clock input is qualified by the
clock enable (CEN) signal, which when deasserted suspends
operation and extends the previous clock cycle. Maximum
access delay from the clock rise is 6.5 ns (133-MHz device).
Write operations are controlled by the two or four byte write
select (BW_X) and a write enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous chip enables (CE₁, CE₂, CE₃) and an
asynchronous output enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated during
the data portion of a write sequence.
Selection Guide
Maximum access time
Maximum operating current
Maximum CMOS standby current
Description
133 MHz
6.5
250
40
100 MHz Unit
7.5
ns
180
mA
40
mA
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 38-05539 Rev. *K
• San Jose, CA 95134-1709 • 408-943-2600
Revised September 24, 2012