CY7C1317AV18 Datasheet, PDF (1/20 Pages) Cypress Semiconductor – 18-Mbit DDR-II SRAM 4-Word Burst Architecture

PRELIMINARY
CY7C1317AV18
CY7C1319AV18
CY7C1321AV18
18-Mbit DDR-II SRAM 4-Word Burst Architecture
Features
• 18-Mbit density (2M x 8, 1M x 18, 512K x 36)
• 250-MHz clock for high bandwidth
• 4-Word burst for reducing address bus frequency
• Double Data Rate (DDR) interfaces (data transferred at
500 MHz) @ 250 MHz
• Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
• Two output clocks (C and C) account for clock skew
and flight time mismatching
• Echo clocks (CQ and CQ) simplify data capture in
high-speed systems
• Synchronous internally self-timed writes
• 1.8V core power supply with HSTL inputs and outputs
• Variable drive HSTL output buffers
• Expanded HSTL output voltage (1.4V–V_DD)
• 13 x 15 x 1.4mm 1.0-mm pitch fBGA package, 165-ball
(11 x 15 matrix)
• JTAG 1149.1 compatible test access port
• Delay Lock Loop (DLL) for accurate data placement.
Configurations
CY7C1317AV18 – 2M x 8
CY7C1319AV18 – 1M x 18
CY7C1321AV18 – 512K x 36
Logic Block Diagram (CY7C1317AV18)
Functional Description
The CY7C1317AV18/CY7C1319AV18/CY7C1321AV18 are
1.8V Synchronous Pipelined SRAM equipped with DDR-II
(Double Data Rate) architecture. The DDR-II consists of an
SRAM core with advanced synchronous peripheral circuitry
and a two-bit burst counter. Addresses for Read and Write are
latched on alternate rising edges of the input (K) clock. Write
data is registered on the rising edges of both K and K. Read
data is driven on the rising edges of C and C if provided, or on
the rising edge of K and K if C/C are not provided. Each
address location is associated with four 8-bit words in the case
of CY7C1317AV18 that burst sequentially into or out of the
device. The burst counter always starts with “00” internally in
the case of CY7C1317AV18. On CY7C1319AV18 and
CY7C1321AV18, the burst counter takes in the last two signif-
icant bits of the external address and bursts four 18-bit words
in the case of CY7C1319AV18, and four 36-bit words in the
case of CY7C1321AV18, sequentially into or out of the device.
Asynchronous inputs include impedance match (ZQ).
Synchronous data outputs (Q, sharing the same physical pins
as the data inputs, D) are tightly matched to the two output
echo clocks CQ/CQ, eliminating the need for separately
capturing data from each individual DDR-II SRAM in the
system design. Output data clocks (C/C) enable maximum
system clocking and data synchronization flexibility.
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
A_(18:0)
19
LD
Address
Register
K
K
DOFF
CLK
Gen.
V_REF
R/W
NWS_[1:0]
Control
Logic
Write Write Write Write
Reg Reg Reg Reg
Read Data Reg.
32 ₁₆
16
Output
Logic
Control
R/W
C
C
Reg.
Reg.
Reg.
8
8
8
CQ
CQ
DQ_[7:0]
Cypress Semiconductor Corporation • 3901 North First Street • San Jose, CA 95134 • 408-943-2600
Document #: 38-05500 Rev. *B
Revised August 11, 2004