CY7C1311CV18 Datasheet, PDF (1/31 Pages) Cypress Semiconductor – 18-Mbit QDR™-II SRAM 4-Word Burst Architecture

CY7C1311CV18, CY7C1911CV18
CY7C1313CV18, CY7C1315CV18
18-Mbit QDR™-II SRAM 4-Word
Burst Architecture
Features
■ Separate independent read and write data ports
❐ Supports concurrent transactions
■ 300 MHz clock for high bandwidth
■ 4-word burst for reducing address bus frequency
■ Double Data Rate (DDR) interfaces on both read and write ports
(data transferred at 600 MHz) at 300 MHz
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
■ Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
■ Single multiplexed address input bus latches address inputs
for both read and write ports
■ Separate port selects for depth expansion
■ Synchronous internally self-timed writes
■ QDR™-II operates with 1.5 cycle read latency when the Delay
Lock Loop (DLL) is enabled
■ Operates as a QDR-I device with 1 cycle read latency in DLL
off mode
■ Available in x 8, x 9, x 18, and x 36 configurations
■ Full data coherency, providing most current data
■ Core V_DD = 1.8 (±0.1V); IO V_DDQ = 1.4V to V_DD
■ Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ Variable drive HSTL output buffers
■ JTAG 1149.1 compatible test access port
■ Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1311CV18 – 2M x 8
CY7C1911CV18 – 2M x 9
CY7C1313CV18 – 1M x 18
CY7C1315CV18 – 512K x 36
Functional Description
The CY7C1311CV18, CY7C1911CV18, CY7C1313CV18, and
CY7C1315CV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR™-II architecture. QDR-II architecture
consists of two separate ports: the read port and the write port to
access the memory array. The read port has dedicated data
outputs to support read operations and the write port has
dedicated data inputs to support write operations. QDR-II
architecture has separate data inputs and data outputs to
completely eliminate the need to “turn-around” the data bus
required with common IO devices. Access to each port is
accomplished through a common address bus. Addresses for
read and write addresses are latched on alternate rising edges
of the input (K) clock. Accesses to the QDR-II read and write
ports are completely independent of one another. In order to
maximize data throughput, both read and write ports are
provided with DDR interfaces. Each address location is
associated with four 8-bit words (CY7C1311CV18) or 9-bit words
(CY7C1911CV18) or 18-bit words (CY7C1313CV18) or 36-bit
words (CY7C1315CV18) that burst sequentially into or out of the
device. Because data can be transferred into and out of the
device on every rising edge of both input clocks (K and K and C
and C), memory bandwidth is maximized while simplifying
system design by eliminating bus “turn-arounds”.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Selection Guide
Maximum Operating Frequency
Maximum Operating Current
300 MHz
300
x8
765
x9
800
x18
840
x36
985
278 MHz
278
720
730
760
910
250 MHz
250
665
675
705
830
200 MHz
200
560
570
590
675
167 MHz
167
495
490
505
570
Unit
MHz
mA
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-07165 Rev. *C
• San Jose, CA 95134-1709 • 408-943-2600
Revised September 26, 2007
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