CY7C12611KV18 Datasheet, PDF (1/30 Pages) Cypress Semiconductor – 36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)

CY7C12611KV18, CY7C12761KV18
CY7C12631KV18, CY7C12651KV18
36-Mbit QDR^® II+ SRAM 4-Word Burst
Architecture (2.5 Cycle Read Latency)
36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
Features
■ Separate independent read and write data ports
❐ Supports concurrent transactions
■ 550 MHz clock for high bandwidth
■ 4-word burst for reducing address bus frequency
■ Double data rate (DDR) intrfaces on both read and write ports
(Data transferred at 1100 MHz) at 550 MHz
■ Available in 2.5 clock cycle latency
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Echo clocks (CQ and CQ) simplify data capture in high speed
systems
■ Data valid pin (QVLD) to indicate valid data on the output
■ Single multiplexed address input bus latches address inputs
for read and write ports
■ Separate port selects for depth expansion
■ Synchronous internally self timed writes
■ QDR^® II+ operates with 2.5 cycle read latency when DOFF is
asserted HIGH
■ Operates similar to QDR I device with 1 cycle read latency when
DOFF is asserted LOW
■ Available in x8, x9, x18, and x36 configurations
■ Full data coherency, providing most current data
■ Core V_DD = 1.8 V± 0.1 V; I/O V_DDQ = 1.4 V to V_DD ^[1]
❐ Supports both 1.5 V and 1.8 V I/O supply
■ High speed transceiver logic (HSTL) inputs and variable drive
HSTL output buffers
■ Available in 165-ball Fine pitch ball grid array (FBGA) package
(13 x 15 x 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ Joint test action group (JTAG) 1149.1 compatible test access
port
■ Phase locked loop (PLL) for accurate data placement
Configurations
With Read Cycle Latency of 2.5 cycles:
CY7C12611KV18 – 4 M x 8
CY7C12761KV18 – 4 M x 9
CY7C12631KV18 – 2 M x 18
CY7C12651KV18 – 1 M x 36
Functional Description
The CY7C12611KV18, CY7C12761KV18, CY7C12631KV18,
and CY7C12651KV18 are 1.8 V Synchronous Pipelined SRAMs,
equipped with QDR^® II+ architecture. Similar to QDR II
architecture, QDR II+ architecture consists of two separate ports:
the read port and the write port to access the memory array. The
read port has dedicated data outputs to support read operations
and the write port has dedicated data inputs to support write
operations. QDR II+ architecture has separate data inputs and
data outputs to completely eliminate the need to “turnaround” the
data bus that exists with common I/O devices. Each port is
accessed through a common address bus. Addresses for read
and write addresses are latched on alternate rising edges of the
input (K) clock. Accesses to the QDR II+ read and write ports are
independent of one another. To maximize data throughput, both
read and write ports are equipped with DDR interfaces. Each
address location is associated with four 8-bit words
(CY7C12611KV18), 9-bit words (CY7C12761KV18), 18-bit
words (CY7C12631KV18), or 36-bit words (CY7C12651KV18)
that burst sequentially into or out of the device. Because data is
transferred into and out of the device on every rising edge of both
input clocks (K and K), memory bandwidth is maximized while
simplifying system design by eliminating bus “turnarounds”.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the K or K input clocks. Writes are
conducted with on-chip synchronous self timed write circuitry.
These devices are down bonded from the 65 nm 72 M
QDRII+/DDRII+ devices and hence have the same I_DD / I_SB1
values and the same JTAG ID code as the equivalent 72 M
device options. For details refer to the application note AN53189,
65 nm Technology Interim QDRII +/ DDRII + SRAM device family
description.
Table 1. Selection Guide
Description
550
MHz
500
MHz
450
MHz
400
MHz
Unit
Max operating frequency
550 500 450 400 MHz
Max operating current x8 900 830 760 690 mA
x9 900 830 760 690
x18 920 850 780 710
x36 1310 1210 1100 1000
Note
1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support V_DDQ = 1.4 V to V_DD.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-53193 Rev. *D
• San Jose, CA 95134-1709 • 408-943-2600
Revised February 2, 2011
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