CY7C12411KV18 Datasheet, PDF (1/29 Pages) Cypress Semiconductor – 36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)

CY7C12411KV18, CY7C12561KV18
CY7C12431KV18, CY7C12451KV18
36-Mbit QDR^® II+ SRAM 4-Word Burst
Architecture (2.0 Cycle Read Latency)
36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
Features
■ Separate Independent Read and Write Data Ports
❐ Supports concurrent transactions
■ 450 MHz Clock for High Bandwidth
■ 4-word Burst for Reducing Address Bus Frequency
■ Double Data Rate (DDR) Interfaces on both Read and Write
Ports (Data transferred at 900 MHz) at 450 MHz
■ Available in 2.0 Clock Cycle Latency
■ Two Input Clocks (K and K) for Precise DDR Timing
❐ SRAM uses rising edges only
■ Echo Clocks (CQ and CQ) simplify Data Capture in High Speed
Systems
■ Data Valid Pin (QVLD) to indicate Valid Data on the Output
■ Single Multiplexed Address Input Bus Latches Address Inputs
for Read and Write Ports
■ Separate Port Selects for Depth Expansion
■ Synchronous Internally Self Timed Writes
■ QDR^® II+ operates with 2.0 Cycle Read Latency when DOFF
is asserted HIGH
■ Operates similar to QDR-I Device with 1 Cycle Read Latency
when DOFF is asserted LOW
■ Available in x8, x9, x18, and x36 Configurations
■ Full Data Coherency, providing most Current Data
■ Core V_DD = 1.8V± 0.1V; I/O V_DDQ = 1.4V to V_DD[1]
❐ Supports both 1.5V and 1.8V I/O supply
■ HSTL Inputs and Variable Drive HSTL Output Buffers
■ Available in 165-Ball FBGA Package (13 x 15 x 1.4 mm)
■ Offered in both Pb-free and non Pb-free Packages
■ JTAG 1149.1 Compatible Test Access Port
■ Phase Locked Loop (PLL) for Accurate Data Placement
Configurations
With Read Cycle Latency of 2.0 cycles:
CY7C12411KV18 – 4M x 8
CY7C12561KV18 – 4M x 9
CY7C12431KV18 – 2M x 18
CY7C12451KV18 – 1M x 36
Functional Description
The CY7C12411KV18, CY7C12561KV18, CY7C12431KV18,
and CY7C12451KV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR II+ architecture. Similar to QDR II
architecture, QDR II+ architecture consists of two separate ports:
the read port and the write port to access the memory array. The
read port has dedicated data outputs to support read operations
and the write port has dedicated data inputs to support write
operations. QDR II+ architecture has separate data inputs and
data outputs to eliminate the need to “turnaround” the data bus
that exists with common I/O devices. Each port is accessed
through a common address bus. Addresses for read and write
addresses are latched on alternate rising edges of the input (K)
clock. Accesses to the QDR II+ read and write ports are
completely independent of one another. To maximize data
throughput, both read and write ports are equipped with DDR
interfaces. Each address location is associated with four 8-bit
words (CY7C12411KV18), 9-bit words (CY7C12561KV18),
18-bit words (CY7C12431KV18), or 36-bit words
(CY7C12451KV18) that burst sequentially into or out of the
device. Because data is transferred into and out of the device on
every rising edge of both input clocks (K and K), memory
bandwidth is maximized while simplifying system design by
eliminating bus “turnarounds”.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the K or K input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
These devices are down bonded from the 65nm 72M
QDRII+/DDRII+ devices and hence have the same I_DD/I_SB1
values and the same JTAG ID code as the equivalent 72M device
options. For details refer to the application note AN53189, 65nm
Technology InterimQDRII+/DDRII+ SRAM device family
description.
Table 1. Selection Guide
Description
450
MHz
Max Operating Frequency 450
Max Operating Current x8 760
x9 760
x18 780
x36 1100
400
MHz
400
690
690
710
1000
375
MHz
375
660
660
680
950
333
MHz
333
600
600
620
850
Unit
MHz
mA
Note
1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support V_DDQ = 1.4V to V_DD.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-53192 Rev. *E
• San Jose, CA 95134-1709 • 408-943-2600
Revised January 31, 2011
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