CY7C10612DV33_11 Datasheet, PDF (1/11 Pages) Cypress Semiconductor – 16-Mbit (1 M × 16) Static RAM

CY7C10612DV33
16-Mbit (1 M × 16) Static RAM
Features
■ High speed
❐ t_AA = 10 ns
■ Low active power
❐ I_CC = 175 mA at 10 ns
■ Low CMOS standby power
❐ I_SB2 = 25 mA
■ Operating voltages of 3.3 ± 0.3 V
■ 2.0 V data retention
■ Automatic Power-down when deselected
■ TTL compatible inputs and outputs
■ Easy memory expansion with CE and OE features
■ Available in Pb-free 54-pin TSOP II package
Functional Description
The CY7C10612DV33 is a high performance CMOS Static RAM
organized as 1,048,576 words by 16 bits.
To write to the device, take Chip Enables (CE) and Write Enable
(WE) input LOW. If Byte Low Enable (BLE) is LOW, then data
from I/O pins (I/O₀ through I/O₇), is written into the location
specified on the address pins (A₀ through A₁₉). If Byte High
Enable (BHE) is LOW, then data from I/O pins (I/O₈ through
I/O₁₅) is written into the location specified on the address pins
(A₀ through A₁₉).
To read from the device, take Chip Enables (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appears on I/O₀ to I/O₇. If
Byte High Enable (BHE) is LOW, then data from memory
appears on I/O₈ to I/O₁₅. See the Truth Table on page 9 for a
complete description of Read and Write modes.
The input or output pins (I/O₀ through I/O₁₅) are placed in a high
impedance state when the device is deselected (CE HIGH), the
outputs are disabled (OE HIGH), the BHE and BLE are disabled
(BHE, BLE HIGH), or during a write operation (CE LOW and WE
LOW).
The CY7C10612DV33 is available in a 54-Pin TSOP II package
with center power and ground (revolutionary) pinout.
Logic Block Diagram
A₀
A₁
A₂
A₃
A₄
A₅
A₆
A₇
A₈
A₉
INPUT BUFFER
1M x 16
ARRAY
COLUMN
DECODER
I/O₀ – I/O₇
I/O₈ – I/O₁₅
BHE
WE
CE
OE
BLE
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-49315 Rev. *B
• San Jose, CA 95134-1709 • 408-943-2600
Revised January 17, 2011
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