CY7C1049GN Datasheet, PDF (1/18 Pages) Cypress Semiconductor – 4-Mbit (512K words × 8 bit) Static RAM

CY7C1049GN
4-Mbit (512K words × 8 bit) Static RAM
4-Mbit (512K words × 8 bit) Static RAM
Features
■ High speed
❐ t_AA = 10 ns
■ Low active and standby currents
❐ Active current: I_CC = 38 mA typical
❐ Standby current: I_SB2 = 6 mA typical
■ Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and
4.5 V to 5.5 V
■ 1.0-V data retention
■ TTL-compatible inputs and outputs
■ Pb-free 36-pin SOJ and 44-pin TSOP II packages
Functional Description
CY7C1049GN is a high-performance CMOS fast static RAM
device organized as 512K words by 8-bits.
Data writes are performed by asserting the Chip Enable (CE) and
Write Enable (WE) inputs LOW, while providing the data on I/O₀
through I/O₇ and address on A₀ through A₁₈ pins.
Data reads are performed by asserting the Chip Enable (CE) and
Output Enable (OE) inputs LOW and providing the required
address on the address lines. Read data is accessible on the I/O
lines (I/O₀ through I/O₇).
All I/Os (I/O₀ through I/O₇) are placed in a high-impedance state
during the following events:
■ The device is deselected (CE HIGH)
■ The control signal OE is de-asserted
The logic block diagram is on page 2.
Product Portfolio
Product
CY7C1049GN18
CY7C1049GN30
CY7C1049GN
Range
Industrial
V_CC Range (V)
1.65 V–2.2 V
2.2 V–3.6 V
4.5 V–5.5 V
Speed
(ns)
10/15
15
10
10
Power Dissipation
Operating I_CC, (mA)
f = f_max
Typ^[1]
Max
Standby, I_SB2 (mA)
Typ^[1]
Max
–
40
38
45
6
8
38
45
Notes
1. Typical values are included only for reference and are not guaranteed or tested. Typical values are measured at V_CC = 1.8 V (for a V_CC range of 1.65 V–2.2 V),
V_CC = 3 V (for a V_CC range of 2.2 V–3.6 V), and V_CC = 5 V (for a V_CC range of 4.5 V–5.5 V), T_A = 25 °C.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-10613 Rev. *A
• San Jose, CA 95134-1709 • 408-943-2600
Revised January 12, 2016