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CY7C1046D_10 Datasheet, PDF (1/15 Pages) Cypress Semiconductor – 4-Mbit (1 M × 4) Static RAM
4-Mbit (1 M × 4) Static RAM
Features
■ Pin- and function-compatible with CY7C1046B
■ High speed
❐ tAA = 10 ns
■ CMOS for optimum speed/power
■ Low active power
❐ ICC = 90 mA @ 10 ns
■ Low CMOS Standby Power
❐ ISB2 = 10 mA
■ Data Retention at 2.0 V
■ Automatic power-down when deselected
■ TTL-compatible inputs and outputs
■ Easy memory expansion with CE and OE features
■ Available in lead-free 400-mil-wide 32-pin SOJ package
Logic Block Diagram
CY7C1046D
4-Mbit (1 M × 4) Static RAM
Functional Description
The CY7C1046D[1] is a high-performance CMOS static RAM
organized as 1M words by 4 bits. Easy memory expansion is
provided by an active LOW Chip Enable (CE), an active LOW
Output Enable (OE), and tri-state drivers. Writing to the device
is accomplished by taking Chip Enable (CE) and Write Enable
(WE) inputs LOW. Data on the four I/O pins (I/O0 through I/O3)
is then written into the location specified on the address pins
(A0 through A19).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The four input/output pins (I/O0 through I/O3) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1046D is available in a standard 400-mil-wide
32-pin SOJ package with center power and ground
(revolutionary) pinout.
A0
A1
A2
AA34
AA56
AA78
A9
A10
CE
WE
OE
INPUT BUFFER
1M x 4
COLUMN
DECODER
POWER
DOWN
I/O0
I/O1
I/O2
I/O3
Note
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 38-05705 Rev. *D
• San Jose, CA 95134-1709 • 408-943-2600
Revised December 1, 2010
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