CY7C1041GN Datasheet, PDF (1/18 Pages) Cypress Semiconductor – 4-Mbit (256K words × 16 bit) Static RAM

CY7C1041GN
4-Mbit (256K words × 16 bit) Static RAM
4-Mbit (256K words × 16 bit) Static RAM
Features
■ High speed
❐ t_AA = 10 ns / 15 ns
■ Low active and standby currents
❐ Active current: I_CC = 38-mA typical
❐ Standby current: I_SB2 = 6-mA typical
■ Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and
4.5 V to 5.5 V
■ 1.0-V data retention
■ TTL-compatible inputs and outputs
■ Pb-free 44-pin SOJ, 44-pin TSOP II, and 48-ball VFBGA
packages
Functional Description
CY7C1041GN is high-performance CMOS fast static RAM
Organized as 256K words by 16-bits.
Data writes are performed by asserting the Chip Enable (CE) and
Write Enable (WE) inputs LOW, while providing the data on I/O₀
through I/O₁₅ and address on A₀ through A₁₇ pins. The Byte High
Enable (BHE) and Byte Low Enable (BLE) inputs control write
operations to the upper and lower bytes of the specified memory
location. BHE controls I/O₈ through I/O₁₅ and BLE controls I/O₀
through I/O₇.
Data reads are performed by asserting the Chip Enable (CE) and
Output Enable (OE) inputs LOW and providing the required
address on the address lines. Read data is accessible on the I/O
lines (I/O₀ through I/O₁₅). Byte accesses can be performed by
asserting the required byte enable signal (BHE or BLE) to read
either the upper byte or the lower byte of data from the specified
address location.
All I/Os (I/O₀ through I/O₁₅) are placed in a high-impedance state
during the following events:
■ The device is deselected (CE HIGH)
■ The control signals (OE, BLE, BHE) are de-asserted
The logic block diagram is on page 2.
Product Portfolio
Product
CY7C1041GN18
CY7C1041GN30
CY7C1041GN
Range
Industrial
V_CC Range (V)
1.65 V–2.2 V
2.2 V–3.6 V
4.5 V–5.5 V
Speed
(ns)
10/15
15
10
10
Power Dissipation
Operating I_CC, (mA)
f = f_max
Typ ^[1]
Max
Standby, I_SB2 (mA)
Typ ^[1]
Max
–
40
6
8
38
45
38
45
Notes
1. Typical values are included only for reference and are not guaranteed or tested. Typical values are measured at V_CC = 1.8 V (for a V_CC range of 1.65 V–2.2 V),
V_CC = 3 V (for a V_CC range of 2.2 V–3.6 V), and V_CC = 5 V (for a V_CC range of 4.5 V–5.5 V), T_A = 25 °C.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-95413 Rev. *B
• San Jose, CA 95134-1709 • 408-943-2600
Revised February 1, 2016