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CY7C1021CV33 Datasheet, PDF (1/12 Pages) Cypress Semiconductor – 64K x 16 Static RAM
CY7C1021CV33
64K x 16 Static RAM
Features
• Pin- and function-compatible with CY7C1021BV33
• High speed
— tAA = 8, 10, 12, and 15 ns
• CMOS for optimum speed/power
• Low active power
— 360 mW (max.)
• Data retention at 2.0V
• Automatic power-down when deselected
• Independent control of upper and lower bits
• Available in 44-pin TSOP II, 400-mil SOJ, 48-ball FBGA
Functional Description
The CY7C1021CV33 is a high-performance CMOS static
RAM organized as 65,536 words by 16 bits. This device has
an automatic power-down feature that significantly reduces
power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
Logic Block Diagram
DATA IN DRIVERS
A7
A6
A5
64K x 16
A4
RAM Array
A3
512 X 2048
A2
A1
A0
COLUMN DECODER
(BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is
written into the location specified on the address pins (A0
through A15). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O9 through I/O16) is written into the location
specified on the address pins (A0 through A15).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O1 to I/O8. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O9 to I/O16. See
the truth table at the end of this data sheet for a complete
description of Read and Write modes.
The input/output pins (I/O1 through I/O16) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a Write operation
(CE LOW, and WE LOW).
The CY7C1021CV33 is available in standard 44-pin TSOP
Type II 400-mil-wide SOJ packages, as well as a 48-ball
FBGA.
I/O1–I/O8
I/O9–I/O16
BHE
WE
CE
OE
BLE
Pin Configuration
SOJ / TSOP II
Top View
A4 1
A3 2
A2 3
A1 4
A0 5
CE 6
I/O1 7
I/O2 8
I/O3 9
I/O4 10
VCC 11
VSS 12
I/O5 13
I/O6 14
I/O7 15
I/O8 16
WE 17
A15 18
A14 19
A13 20
A12 21
NC 22
44 A5
43 A6
42 A7
41 OE
40 BHE
39 BLE
38 I/O16
37 I/O15
36 I/O14
35 I/O13
34 VSS
33 VCC
32 I/O12
31 I/O11
30 I/O10
29 I/O9
28 NC
27 A8
26 A9
25 A10
24 A11
23 NC
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
CY7C1021CV33-8
8
95
5
CY7C1021CV33-10 CY7C1021CV33-12 CY7C1021CV33-15 Unit
10
12
15
ns
90
85
80
mA
5
5
5
mA
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
Document #: 38-05132 Rev. *C
Revised October 30, 2002