CY7C1021CV26_05 Datasheet, PDF (1/9 Pages) Cypress Semiconductor – 1-Mbit (64K x 16) Static RAM

CY7C1021CV26
1-Mbit (64K x 16) Static RAM
Features
• Temperature Range
— Automotive: –40°C to 125°C
• High speed
— t_AA = 15 ns
• Optimized voltage range: 2.5V–2.7V
• Low active power: 360 mW (max.)
• Automatic power-down when deselected
• Independent control of upper and lower bits
• CMOS for optimum speed/power
• Packages offered: 44-pin TSOP II and 44-Lead (400-Mil)
Molded SOJ
• Offered in both lead-free and non lead-free packages
Functional Description
The CY7C1021CV26 is a high-performance CMOS static
RAM organized as 65,536 words by 16 bits. This device has
an automatic power-down feature that significantly reduces
power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O₁ through I/O₈), is
written into the location specified on the address pins (A₀
through A₁₅). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O₉ through I/O₁₆) is written into the location
specified on the address pins (A₀ through A₁₅).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O₁ to I/O₈. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O₉ to I/O₁₆. See
the truth table at the end of this data sheet for a complete
description of Read and Write modes.
The input/output pins (I/O₁ through I/O₁₆) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a Write operation
(CE LOW, and WE LOW).
Logic Block Diagram
DATA IN DRIVERS
A₇
A₆
A₅
64K x 16
A₄
RAM Array
A₃
512 X 2048
A₂
A₁
A₀
I/O₁–I/O₈
I/O₉–I/O₁₆
COLUMN DECODER
BHE
WE
CE
OE
BLE
Selection Guide^[1]
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
CY7C1021CV26-15
15
80
10
Note:
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V_CC = V_CC(typ.), T_A = 25°C.
Unit
ns
mA
mA
Cypress Semiconductor Corporation • 3901 North First Street • San Jose, CA 95134 • 408-943-2600
Document #: 38-05589 Rev. *A
Revised March 7, 2005