CY7C0831AV_12 Datasheet, PDF (1/31 Pages) Cypress Semiconductor – FLEx18™ 3.3 V 128 K / 256 K / 512 K × 18 Synchronous Dual-Port RAM

CY7C0831AV, CY7C0832AV
CY7C0832BV, CY7C0833V
FLEx18™ 3.3 V 128 K / 256 K / 512 K × 18
Synchronous Dual-Port RAM
FLEx18™ 3.3 V 128 K / 256 K / 512 K × 18 Synchronous Dual-Port RAM
Features
■ True dual-ported memory cells that allow simultaneous access
of the same memory location
■ Synchronous pipelined operation
■ Family of 2-Mbit, 4-Mbit, and 9-Mbit devices
■ Pipelined output mode allows fast operation
■ 0.18 micron CMOS for optimum speed and power
■ High speed clock to data access
■ 3.3 V low power
❐ Active as low as 225 mA (typ)
❐ Standby as low as 55 mA (typ)
■ Mailbox function for message passing
■ Global master reset
■ Separate byte enables on both ports
■ Commercial and Industrial temperature ranges
■ IEEE 1149.1 compatible JTAG boundary scan
■ 144-ball FBGA (13 mm × 13 mm) (1.0 mm pitch)
■ 120-pin TQFP (14 mm × 14 mm × 1.4 mm)
■ Pb-free packages available
■ Counter wrap around control
❐ Internal mask register controls counter wrap around
❐ Counter-interrupt flags to indicate wrap around
❐ Memory block retransmit operation
■ Counter readback on address lines
■ Mask register readback on address lines
■ Dual chip enables on both ports for easy depth expansion
Functional Description
The FLEx18™ family includes 2-Mbit, 4-Mbit, and 9-Mbit
pipelined, synchronous, true dual port static RAMs that are high
speed, low power 3.3 V CMOS. Two ports are provided,
permitting independent, simultaneous access to any location in
memory. The result of writing to the same location by more than
one port at the same time is undefined. Registers on control,
address, and data lines allow for minimal setup and hold time.
During a Read operation, data is registered for decreased cycle
time. Each port contains a burst counter on the input address
register. After externally loading the counter with the initial
address, the counter increments the address internally (more
details to follow). The internal Write pulse width is independent
of the duration of the R/W input signal. The internal Write pulse
is self-timed to allow the shortest possible cycle times.
A HIGH on CE₀ or LOW on CE₁ for one clock cycle powers down
the internal circuitry to reduce the static power consumption. One
cycle with chip enables asserted is required to reactivate the
outputs.
Additional features include: readback of burst-counter internal
address value on address lines, counter-mask registers to
control the counter wrap around, counter interrupt (CNTINT)
flags, readback of mask register value on address lines,
retransmit functionality, interrupt flags for message passing,
JTAG for boundary scan, and asynchronous Master Reset
(MRST).
The CY7C0833V device in this family has limited features. See
Address Counter and Mask Register Operations on page 7 for
details.
Product Selection Guide
Density
Part Number
Maximum Speed (MHz)
Maximum Access Time - Clock to Data (ns)
Typical Operating Current (mA)
Package
2 Mbit
(128 K × 18)
CY7C0831AV
133
4.0
225
120-pin TQFP
4 Mbit
(256 K × 18)
CY7C0832AV CY7C0832BV ^[1]
167
133
4.0
4.4
225
225
120-pin TQFP
120-pin TQFP
9 Mbit
(512 K × 18)
CY7C0833V
100
4.7
270
144-ball FBGA
Note
1. CY7C0832AV and CY7C0832BV are functionally identical.
Cypress Semiconductor Corporation • 198 Champion Court
Document #: 38-06059 Rev. *W
• San Jose, CA 95134-1709 • 408-943-2600
Revised October 13, 2011