CY62167E_10 Datasheet, PDF (1/15 Pages) Cypress Semiconductor – 16-Mbit (1 M × 16 / 2 M × 8) Static RAM

CY62167E MoBL^®
16-Mbit (1 M × 16 / 2 M × 8) Static RAM
16-Mbit (1M × 16 / 2M × 8) Static RAM
Features
■ Configurable as 1 M × 16 or as 2 M × 8 SRAM
■ Very high speed: 45 ns
■ Wide voltage range: 4.5 V to 5.5 V
■ Ultra low standby power
❐ Typical standby current: 1.5 µA
❐ Maximum standby current: 12 µA
■ Ultra low active power
❐ Typical active current: 2.2 mA at f = 1 MHz
■ Easy memory expansion with CE₁, CE₂, and OE features
■ Automatic power-down when deselected
■ CMOS for optimum speed and power
■ Offered in 48-pin TSOP I package
Functional Description^[1]
The CY62167E is a high performance CMOS static RAM
organized as 1 M words by 16-bits/2 M words by 8-bits. This
device features advanced circuit design to provide an ultra low
active current. This is ideal for providing More Battery Life™
(MoBL^®) in portable applications such as cellular telephones.
The device also has an automatic power down feature that
reduces power consumption by 99% when addresses are not
toggling. Place the device into standby mode when deselected
(CE₁ HIGH, or CE₂ LOW, or both BHE and BLE are HIGH). The
input and output pins (I/O₀ through I/O₁₅) are placed in a high
impedance state when:
■ The device is deselected (CE₁ HIGH or CE₂ LOW)
■ Outputs are disabled (OE HIGH)
■ Both byte high enable and byte low enable are disabled (BHE,
BLE HIGH) or
■ A write operation is in progress (CE₁ LOW, CE₂ HIGH, and WE
LOW)
To write to the device, take chip enables (CE₁ LOW and CE₂
HIGH) and write enable (WE) input LOW. If byte low enable
(BLE) is LOW, then data from I/O pins (I/O₀ through I/O₇), is
written into the location specified on the address pins (A₀ through
A₁₉). If byte high enable (BHE) is LOW, then data from the I/O
pins (I/O₈ through I/O₁₅) is written into the location specified on
the address pins (A₀ through A₁₉).
To read from the device, take chip enables (CE₁ LOW and CE₂
HIGH) and output enable (OE) LOW while forcing the write
enable (WE) HIGH. If byte low enable (BLE) is LOW, then data
from the memory location specified by the address pins appears
on I/O₀ to I/O₇. If byte high enable (BHE) is LOW, then data from
memory appears on I/O₈ to I/O₁₅. See the “Truth Table” on
page 11 for a complete description of read and write modes.
Logic Block Diagram
DATA IN DRIVERS
A₁₀
A₉
A₈
A₇
A₆
A₅
1 M × 16 / 2 M × 8
A₄
RAM ARRAY
A₃
A₂
A
A
1
0
I/O₀–I/O₇
I/O₈–I/O₁₅
POWER DOWN
CIRCUIT
COLUMN DECODER
CE₂
CE₁
BHE
BLE
BYTE
BHE
WE
CE₂
OE
CE₁
BLE
Note
1. For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-15607 Rev. *B
• San Jose, CA 95134-1709 • 408-943-2600
Revised August 16, 2010
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